CMOS SDRAM Samsung Electronics, CMOS SDRAM Datasheet

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... Latency Reserved Reserved Reserved Reserved Reserved Reserved CMOS SDRAM Burst Type Burst Length A Type Sequential Interleave ...

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... CMOS SDRAM Interleave Interleave ...

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... The 12 bit row addresses are latched along with RAS and BA BA during bank activate command. The 8 bit column addresses 1 are latched along with CAS, WE and BA write command. CMOS SDRAM ~ BA inputs ...

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... The 13 bit row addresses are latched along with RAS and during bank activate command. The 9 bit column addresses 1 are latched along with CAS, WE and during read write command. CMOS SDRAM ~ BA inputs inputs ...

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... The write burst length is programmed using and must be set to low for normal SDRAM operation. Refer to the table for specific codes for various burst length, burst type and CAS latencies. CMOS SDRAM ~ BA in the same cycle as CS burst type uses A , CAS vendor ...

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... Asserting low on CS, RAS, and WE with high on A ment, performs precharge on all banks. At the end of t forming precharge to all the banks, both banks are in idle state. CMOS SDRAM RDL /AP after all banks have satisfied t 10 Rev. 0.2 Sep. 1999 ...

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... CMOS SDRAM (min). The minimum number of clock cycles required RC with clock cycle time and them ...

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... DQ(CL2 DQ(CL3 Not Written 2) Read Mask (BL=4) CLK CMD DQM Masked byDQM DQ(CL2 DQ(CL3 Note 2 Hi-Z Hi Hi-Z Hi CMOS SDRAM RD Masked by CKE Suspended Dout RD Masked by DQM Hi Hi DQM to Data-out Mask = 2 ...

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... Last data in to new column address delay. (=1CLK) CDL ELECTRONICS Note Write interrupted by Read (BL=2) CLK CMD ADD DQ(CL2 DQ(CL3) CMOS SDRAM WR RD tCCD Note tCDL Note 3 Rev. 0.2 Sep. 1999 ...

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... Note Hi Hi Note 1 CMOS SDRAM Rev. 0.2 Sep. 1999 ...

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... Note 4 tDAL =1CLK +20ns WR DQ(CL3 tRDL =2CLK Note 4 tDAL =2CLK +20ns Note 3 Auto Precharge Starts @tRDL=2CLK =1CLK and tRDL=2CLK for all memory devices. SAMSUNG recommands tRDL=2 CLK. RDL CMOS SDRAM CLK WR CMD DQM Masked by DQM ...

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... Note 2 STOP MRS ACT tRP 2CLK =1CLK and tRDL=2CLK for all memory devices. SAMSUNG recommands tRDL=2 CLK. RDL CMOS SDRAM WR PRE tRDL Note 1 CLK CMD RD PRE DQ(CL2 DQ(CL3) ...

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... Before/After self refresh mode, burst auto refresh cycle is recommended. ELECTRONICS tSS RD Note 3 AR tRP tRC SR tRP from self refresh exit command, any other command can not be accepted. CMOS SDRAM 2) Power Down (=Precharge Power Down) Exit CLK CKE tSS Internal Note 2 CLK CMD NOP Note 5 ...

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... During read/write burst with auto precharge, RAS interrupt can not be issued. Before the end of burst, new read/write stops read/write burst and starts new read/write burst. During read/write burst with auto precharge, CAS interrupt can not be issued. CMOS SDRAM Rev. 0.2 Sep. 1999 ...

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... X X ILLEGAL NOP --> Idle after NOP --> Idle after ILLEGAL ILLEGAL ILLEGAL /AP NOP --> Idle after t 10 CMOS SDRAM ACTION Note Rev. 0.2 Sep. 1999 ...

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... NOP --> Idle after ILLEGAL ILLEGAL ILLEGAL NOP --> Idle after 2 clocks NOP --> Idle after 2 clocks ILLEGAL ILLEGAL ILLEGAL BA = Bank Address CA = Column Address AP = Auto Precharge CMOS SDRAM ACTION RCD RCD RC RC /AP). 10 Rev. 0.2 Sep. 1999 Note ...

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... must be satisfied before any command other than exit. SS CMOS SDRAM ACTION INVALID Exit Self Refresh --> Idle after t (ABI) RFC Exit Self Refresh --> Idle after t (ABI) RFC ILLEGAL ILLEGAL ILLEGAL NOP (Maintain Self Refresh) INVALID Exit Power Down --> ABI Exit Power Down --> ...