MMBT5551-A-AE3-B-R UTC [Unisonic Technologies], MMBT5551-A-AE3-B-R Datasheet - Page 3

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MMBT5551-A-AE3-B-R

Manufacturer Part Number
MMBT5551-A-AE3-B-R
Description
HIGH VOLTAGE SWITCHING TRANSISTOR
Manufacturer
UTC [Unisonic Technologies]
Datasheet
■ TYPICAL CHARACTERICS
MMBT5551
Fig.1 Collector Output Capacitance
10
10
10
10
10
10
10
10
10
8
6
4
2
0
3
3
2
1
0
2
1
0
10
10
UNISONIC TECHNOLOGIES CO., LTD
0
www.unisonic.com.tw
0
0
Fig.3 Base-Emitter on Voltage
Fig.5 Current Gain -Bandwidth
Collector-Base Voltage (V)
Collector Current , Ic (mA)
Base-Emitter Voltage (V)
0.2
10
1
0.4
Product
10
1
f=1MHz
I
V
E
0.6
CE
=0
10
=10V
2
V
CE
0.8
=5V
10
10
1.0
2
3
NPN EPITAXIAL SILICON TRANSISTOR
10
10
10
10
10
10
10
10
3
0
-2
2
1
-1
1
0
10
10
-1
-1
Ic=10*I
Collector Current , Ic (mA)
Fig.4 Saturation Voltage
Fig.2 DC Current Gain
Collector Current , Ic (mA)
10
10
0
0
B
V
V
CE(SAT )
BE(SAT)
10
10
1
1
V
CE
=5V
10
10
2
2
QW-R206-010,D
10
10
3
3
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