MMBT5551-A-AE3-B-R UTC [Unisonic Technologies], MMBT5551-A-AE3-B-R Datasheet - Page 2

• Manufacturer Part Number: MMBT5551-A-AE3-B-R
• Description: HIGH VOLTAGE SWITCHING TRANSISTOR
• Manufacturer: UTC [Unisonic Technologies]

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain(note)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Note: Pulse test: PW<300µs, Duty Cycle<2%
MMBT5551
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
DC Collector Current
Power Dissipation
Operating and Storage Junction Temperature
ABSOLUATE MAXIUM RATINGS
ELECTRICAL CHARACTERISTICS
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
CLASSIFICATION OF h
RANGE
RANK
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
FE
SYMBOL
V
V
80-170
V
V
V
CE(SAT)
BE(SAT)
I
I
h
C
CBO
EBO
N
CBO
CEO
EBO
f
A
FE
T
ob
F
(Ta = 25℃)
I
I
I
V
V
V
V
V
I
I
I
I
V
V
I
R
C
C
E
C
C
C
C
C
(Ta= 25℃, unless otherwise specified)
CB
BE
CE
CE
CE
CE
CB
=100µA, I
=1mA, I
=10µA, I
=10mA, I
=50mA, I
=10mA, I
=50mA, I
=0.25mA, V
S
=1kΩ, f=10Hz ~ 15.7kHz
=4V, I
=120V, I
=5V, I
=5V, I
=5V, I
=10V, I
=10V, I
TEST CONDITIONS
NPN EPITAXIAL SILICON TRANSISTOR
B
C
C
C
C
C
=0
B
B
B
B
C
E
=0
=0
=1mA
=10mA
=50mA
E
=1mA
=5mA
=1mA
=5mA
=0, f=1MHz
E
=0
=10mA, f=100MHz
=0
CE
SYMBOL
T
=5V
V
V
V
J,
P
CBO
CEO
EBO
I
T
C
D
STG
150-240
B
-55 ~ +150
RATINGS
MIN
180
160
100
80
80
80
6
180
160
600
350
6
TYP
160
200-400
MAX
C
0.15
400
300
0.2
6.0
50
50
QW-R206-010,D
1
1
8
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UNIT
UNIT
mW
MHz
mA
nA
nA
dB
℃
pF
V
V
V
V
V
V
V
V