MMBFJ177LT1G_11 ONSEMI [ON Semiconductor], MMBFJ177LT1G_11 Datasheet - Page 2

• Manufacturer Part Number: MMBFJ177LT1G_11
• Description: JFET Chopper
• Manufacturer: ONSEMI [ON Semiconductor]

2. Pulse Test: Pulse Width < 300 ms, Duty Cycle ≤ 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Gate−Source Breakdown Voltage (V
Gate Reverse Current (V
Gate Source Cutoff Voltage (V
Zero−Gate−Voltage Drain Current (V
Drain Cutoff Current (V
Drain Source On Resistance (I
Input Capacitance
Reverse Transfer Capacitance
8
7
6
5
4
3
2
1
0
0
VGS = 0 V
Figure 1. Drain Current vs. Drain−Source
2
V
DS
, DRAIN−SOURCE VOLTAGE (V)
DS
DS
4
= 15 Vdc, V
= 0 Vdc, V
DS
D
Voltage
= 500 mAdc)
= 15 Vdc, I
32
28
24
20
16
12
Characteristic
6
8
4
0
DS
GS
0
GS
GS
= 0, I
= 0, V
(T
= 10 Vdc)
= 20 Vdc)
A
D
D
= 25°C unless otherwise noted)
8
DS
= 10 nAdc)
= 1.0 mAdc)
TYPICAL CHARACTERISTICS
−5
VGS = −0.1 V
VGS = −0.3 V
VGS = −0.5 V
VGS = −0.7 V
VGS = −0.9 V
V
= 15 Vdc) (Note 2)
DS
Figure 3. Input Capacitance
, DRAIN−SOURCE VOLTAGE (V)
V
10
DS
http://onsemi.com
= 0, V
f = 1.0 MHz
−10
GS
12
= 10 Vdc
2
−15
14
12
10
8
6
4
2
0
0
V
f = 1 MHz
GS
−20
Figure 2. Reverse Transfer Capacitance
= 0 V
−5
V
DS
V
Symbol
V
r
, DRAIN−SOURCE VOLTAGE (V)
(BR)GSS
I
DS(on)
I
GS(off)
I
D(off)
C
C
GSS
DSS
−25
rss
iss
−10
Min
0.8
1.5
30
−
−
−
−
−
−15
V
f = 1 MHz
Max
300
1.0
2.5
1.0
5.5
20
GS
11
−
−20
= 0 V
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
pF
W
−25