MMBF2201PT1 MOTOROLA [Motorola, Inc], MMBF2201PT1 Datasheet

MMBF2201PT1

Manufacturer Part Number

MMBF2201PT1

Description

LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS

Manufacturer

MOTOROLA [Motorola, Inc]

Datasheet

1.MMBF2201PT1.pdf (6 pages)

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Low r DS(on) Small-Signal MOSFETs

TMOS Single P-Channel

Field Effect Transistors

serving traits.

High Cell Density, HDTMOS process. Low r DS(on) assures

minimal power loss and conserves energy, making this device

ideal for use in small power management circuitry. Typical

applications are dc–dc converters, power management in

portable and battery–powered products such as computers,

printers, PCMCIA cards, cellular and cordless telephones.

(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.

GreenLine is a trademark of Motorola, Inc.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a registered trademark of the Berquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

MAXIMUM RATINGS

DEVICE MARKING

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Drain–to–Source Voltage

Gate–to–Source Voltage — Continuous

Drain Current — Continuous @ T A = 25 C

Drain Current

Total Power Dissipation @ T A = 25 C (1)

Operating and Storage Temperature Range

Thermal Resistance — Junction–to–Ambient

Maximum Lead Temperature for Soldering Purposes, for 10 seconds

MMBF2202PT1

MMBF2202PT3

Part of the GreenLine

These miniature surface mount MOSFETs utilize Motorola’s

Motorola, Inc. 1998

Low r DS(on) Provides Higher Efficiency and Extends Battery

Life

Miniature SC–70/SOT–323 Surface Mount Package Saves

Board Space

Derate above 25 C

Device

— Continuous @ T A = 70 C

— Pulsed Drain Current (t p

(T J = 25 C unless otherwise noted)

Reel Size

ORDERING INFORMATION

Portfolio of devices with energy–con-

8 mm embossed tape

10 s)

Tape Width

Rating

Quantity

10,000

GATE

3000

3 DRAIN

2 SOURCE

MMBF2202PT1

Symbol

T J , T stg

ENHANCEMENT–MODE

V DSS

R JA

V GS

CASE 419–02, STYLE 8

I DM

P D

T L

I D

r DS(on) = 2.2 OHM

Motorola Preferred Device

TMOS MOSFET

SC–70/SOT–323

P–CHANNEL

– 55 to 150

Order this document

by MMBF2202PT1/D

Value

300

240

750

150

833

260

1.2

mW/ C

mAdc

Unit

Vdc

C/W

Related parts for MMBF2201PT1

MMBF2201PT1 Summary of contents

Page 1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low r DS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–con- serving traits. These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low r ...

Page 2

MMBF2202PT1 ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage ( Vdc Zero Gate Voltage Drain Current ( Vdc ...

Page 3

4 0.1 0.2 0.3 0.4 0 DRAIN CURRENT (AMPS) Figure 3. On Resistance versus Drain Current 1 25 0.1 150 0.01 0.001 0 0.5 1.0 ...

Page 4

MMBF2202PT1 INFORMATION FOR USING THE SC–70/SOT–323 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ...

Page 5

0.05 (0.002) H Motorola Small–Signal Transistors, FETs and Diodes Device Data PACKAGE DIMENSIONS CASE 419–02 SC–70/SOT–323 ISSUE J MMBF2202PT1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ...

Page 6

MMBF2202PT1 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out ...

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