D4203DG-T60-K UTC [Unisonic Technologies], D4203DG-T60-K Datasheet - Page 2

• Manufacturer Part Number: D4203DG-T60-K
• Description: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
• Manufacturer: UTC [Unisonic Technologies]

D4203D
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Junction to Case
Collector-Emitter Sustaining Voltage
Collector -Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collect - Base Cut-off Current
Collect - Emitter Cut-off Current
Emitter - Base Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Resistive Load
Current Gain Bandwidth Product
Collector- Base Voltage
Collector-Emitter Voltage (I
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)
Total Power Dissipation
Junction Temperature
Storage Temperature
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
ABSOLUTE MAXIMUM RATINGS
THERMAL DATA
ELECTRICAL CHARACTERISTICS
2. Pulse Test: Pulse Width = 5.0ms, Duty Cycle < 10%.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
PARAMETER
PARAMETER
Fall Time
Storage Time
B
=0)
Preliminary
SYMBOL
V
V
V
V
BV
BV
CEO(SUS)
CE(SAT)1
CE(SAT)2
BE(SAT)
h
h
I
I
I
CBO
CEO
EBO
t
FE1
FE2
t
f
(T
F
S
T
CBO
EBO
C
=25°C)
I
I
I
V
V
V
V
V
I
I
I
V
V
C
C
E
C
C
C
CB
CE
EB
CE
CE
CC
CE
=10mA, I
=1mA, I
=0.5A, I
=1.5A, I
=1A, I
=1mA, I
SYMBOL
SYMBOL
=680V, I
=400V,I
=7V, I
=10V, I
=24 V, I
=5V, I
=10V, I
V
V
V
T
TEST CONDITIONS
θ
I
P
T
CBO
CEO
EBO
I
STG
CP
C
JC
C
B
J
=0.25A
E
C
B
B
C
C
=0
=0
=0.1A
=0.5A
B
C
=0
=5mA
B
C
C
=0
=0.5A
E
=0
=200 mA
=2A, I
=0
NPN SILICON TRANSISTOR
B1
=-I
B2
=0.4A
-55 ~ +150
RATINGS
RATINGS
6.25
700
400
150
2.0
4.0
20
9
MIN
400
700
9
6
8
4
TYP
MAX UNIT
100
0.5
1.8
0.7
40
40
QW-R204-026.a
50
10
2
4
UNIT
°C/W
UNIT
°C
°C
W
V
V
V
A
A
2 of 2
MH
μA
μA
μA
μs
μs
V
V
V
V
V
V
Z