SDB20S30_07 INFINEON [Infineon Technologies AG], SDB20S30_07 Datasheet

SDB20S30_07

Manufacturer Part Number

SDB20S30_07

Description

Silicon Carbide Schottky Diode Switching behavior benchmark No reverse recovery

Manufacturer

INFINEON [Infineon Technologies AG]

Datasheet

1.SDB20S30_07.pdf (8 pages)

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Silicon Carbide Schottky Diode

• Revolutionary semiconductor

• Switching behavior benchmark

• No reverse recovery

• No temperature influence on

• No forward recovery

Type

SDB20S30

Maximum Ratings, at T

Parameter

Continuous forward current,

RMS forward current,

Surge non repetitive forward current, sine halfwave

Repetitive peak forward current

Non repetitive peak forward current

Repetitive peak reverse voltage

Surge peak reverse voltage

Power dissipation, single diode mode,

Operating and storage temperature

Rev. 1.2

=10µs, T

=150°C, T

material - Silicon Carbide

the switching behavior

t value,

=25°C, t

=25°C

=10ms

=100°C, D=0.1

=25°C, t

Package

D2PAK

=10ms

f=50Hz

= 25 °C, unless otherwise specified (per leg)

=100°C

Ordering Code

Q67040-S4374

=25°C

Page 1

Symbol

FRMS

FSM

FRM

FMAX

j ,

RRM

RSM

tot

Marking

D20S30

thinQ!

stg

Product Summary

SiC Schottky Diode

-55... +175

RRM

Value

100

300

6.5

D2PAK

SDB20S30

2x10

2007-03-27

300

Unit

A²s

°C

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