STE30NK90Z_06 STMICROELECTRONICS [STMicroelectronics], STE30NK90Z_06 Datasheet
STE30NK90Z_06
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STE30NK90Z_06 Summary of contents
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... PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application Order codes ...
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Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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STE30NK90Z 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) ...
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Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 4. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...
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STE30NK90Z Table 6. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM t Reverse ...
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Electrical characteristics 2.2 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/13 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STE30NK90Z ...
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STE30NK90Z Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized B VDSS ...
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Electrical characteristics Figure 13. Avalanche energy vs starting Tj 8/13 STE30NK90Z ...
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STE30NK90Z 3 Test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive waveform Figure 15. Gate charge test circuit Figure 17. Unclamped Inductive ...
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Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package ...
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STE30NK90Z DIM ISOTOP MECHANICAL DATA mm MIN. TYP. MAX. 11.8 12.2 8.9 9.1 1.95 2.05 0.75 0.85 12.6 12.8 25.15 25.5 31.5 31.7 4 4.1 ...
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Revision history 5 Revision history Table 8. Revision history Date 24-May-2005 10-Jun-2005 28-Sep-2005 14-Oct-2005 12-Jul-2006 12/13 Revision 1 First Release 2 Inserted new row in 3 Complete version 4 Modified Figure 3, 5 New template, no content change STE30NK90Z Changes ...
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STE30NK90Z Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at ...