SPB80N06S-08_05 INFINEON [Infineon Technologies AG], SPB80N06S-08_05 Datasheet - Page 7

• Manufacturer Part Number: SPB80N06S-08_05
• Description: SIPMOS Power-Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

Rev. 1.0
13 Typ. Avalanche characteristics
I
parameter: T
15 Typ. gate charge
V
parameter: V
AS
GS
=f(t
=f(Q
100
10
12
10
AV
1
8
6
4
2
0
); R
1
gate
0
); I
GS
j(start)
DD
20
D
=25
=80 A pulsed
40
10
Q
C °150
60
t
gate
AV
[µs]
[nC]
80
100
C °100
100
V 11
120
V 44
C °25
1000
140
page 7
14 Typ. Avalanche Energy
E
parameter: I
16 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(T
800
700
600
500
400
300
200
100
64
62
60
58
56
54
52
50
0
=f(T
-60
0
j
); V
80 A
DD
D
j
); I
-20
= 25 V; R
D
=250 µA
SPI80N06S-08, SPP80N06S-08
50
20
GS
T
T
=25
100
j
j
[°C]
60
[°C]
100
SPB80N06S-08
150
140
2005-06-28
200
180