STT3981_10 SECOS [SeCoS Halbleitertechnologie GmbH], STT3981_10 Datasheet - Page 4

• Manufacturer Part Number: STT3981_10
• Description: P-Channel Enhancement Mode Mos.FET
• Manufacturer: SECOS [SeCoS Halbleitertechnologie GmbH]

10-Feb-2010 Rev. C
-
-
0.1
10
0.3
0.2
0.1
0.0
0.1
0.2
1
0.00
-
50
Elektronische Bauelemente
Source-Drain Diode Forward Voltage
-
25
V
T
0.3
J
SD
= 150 C
0
-
I
D
Source-to-Drain Voltage (V)
Threshold Voltage
T -
= 250 A
J
25
0.6
Temperature ( C)
50
0.9
75
T
J
= 25 C
0.01
100
0.1
100
10
1
1.2
0.1
125
Safe Operating Area, Junction-to-Case
r
DS(on)
Limited
I
D(on)
1.5
150
V
DS
Limited
Single Pulse
T
-
C
Drain-to-Source Voltage (V)
1
= 25 C
BV
DSS
Limited
Limited
P-Channel Enhancement Mode Mos.FET
10
I
DM
0.5
0.4
0.3
0.2
0.1
0.0
-1.6 A, -20 V, RDS(ON) 180 mΩ
25
20
15
10
5
0
0
0.001
On-Resistance vs. Gate-to-Source Voltage
1 ms
10 ms
100 ms
10 s, 1 s
dc
Single Pulse Power, Junction-to-Ambient
1
100
V
STT3981
GS
0.01
-
Gate-to-Source Voltage (V)
2
Time (sec)
3
0.1
I
D
= 1.9 A
4
1
5
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