STT3981_10 SECOS [SeCoS Halbleitertechnologie GmbH], STT3981_10 Datasheet - Page 3

• Manufacturer Part Number: STT3981_10
• Description: P-Channel Enhancement Mode Mos.FET
• Manufacturer: SECOS [SeCoS Halbleitertechnologie GmbH]

10-Feb-2010 Rev. C
CHARACTERISTIC CURVES
0.6
0.5
0.4
0.3
0.2
0.1
0.0
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
0
0
0
Elektronische Bauelemente
V
I
1
D
1
On-Resistance vs. Drain Current
DS
V
= 1.9 A
1
DS
= 10 V
Output Characteristics
Qg - Total Gate Charge (nC)
-
2
2
I
Drain-to-Source Voltage (V)
V
D
V
GS
GS
Gate Charg e
-
2
= 1.8 V
= 2.5 V
Drain Current (A)
3
3
V
GS
4
4
3
= 5 thru 3 V
2.5 V
V
5
5
GS
2 V
4
= 4.5 V
1.5 V
6
6
5
7
7
P-Channel Enhancement Mode Mos.FET
400
350
300
250
200
150
100
1.6
1.4
1.2
1.0
0.8
0.6
50
-1.6 A, -20 V, RDS(ON) 180 mΩ
8
7
6
5
4
3
2
1
0
0
0.0
-
0
50
On-Resistance vs. Junction Temperatur e
C
rss
-
0.5
V
I
D
25
GS
= 1.9 A
V
V
= 4.5 V
STT3981
GS
4
DS
T
Transfer Characteristics
J
0
1.0
-
-
-
Junction Temperature ( C)
Gate-to-Source Voltage (V)
Drain-to-Source Voltage (V)
Capacitance
25
1.5
8
C
C
50
oss
iss
T
2.0
C
25 C
= 55
12
-
75
2.5
C
100
16
125 C
3.0
125
Page 3 of 5
3.5
150
20