APT10026JFLL_03 ADPOW [Advanced Power Technology], APT10026JFLL_03 Datasheet - Page 4

• Manufacturer Part Number: APT10026JFLL_03
• Description: Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
• Manufacturer: ADPOW [Advanced Power Technology]

FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
4000
3500
3000
2500
2000
1500
1000
160
140
120
100
500
120
50
10
16
12
80
60
40
20
0
0
FIGURE 16, SWITCHING ENERGY vs CURRENT
1
8
4
0
FIGURE 10, MAXIMUM SAFE OPERATING AREA
1
0
5 10 15 20 25 30 35 40 45 50 55 60
5 10 15 20 25 30 35 40 45 50 55 60
V
V
R
T
L = 100µH
E
diode reverse recovery.
T C = +25°C
T J = +150°C
SINGLE PULSE
I
FIGURE 14, DELAY TIMES vs CURRENT
V
R
T
L = 100µH
LIMITED BY R DS (ON)
DS
D
J
DD
G
ON
DD
J
OPERATION HERE
G
= 125°C
= 38A
= 3
= 125°C
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
50
= 3
= 667V
includes
= 667V
Q
g
100 150 200 250 300 350 400
V DS = 500V
, TOTAL GATE CHARGE (nC)
t
d(on)
10
V DS = 200V
E
off
I
I
D
D
(A)
(A)
100
E
on
t
V DS = 800V
d(off)
1000
100µS
1mS
10mS
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
30,000
10,000
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
10000
1,000
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
8000
6000
4000
2000
100
200
100
100
FIGURE 15, RISE AND FALL TIMES vs CURRENT
10
80
60
40
20
1
0
0
0.3
0
5 10 15 20 25 30 35 40 45 50 55 60
0
V
V
V
I
T
L = 100µH
E
diode reverse recovery.
V
R
T
L = 100µH
D
DS
SD
J
J
DD
ON
DD
G
= 38A
= 125°C
= 125°C
5
= 3
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
= 667V
includes
= 667V
0.5
R
10
10
G
T J =+150°C
, GATE RESISTANCE (Ohms)
15 20 25 30 35 40
0.7
20
E
I
D
on
0.9
(A)
t
r
30
T J =+25°C
1.1
t
f
40
1.3
E
off
C iss
C oss
C rss
45 50
APT10026JFLL
1.5
50