APT10026JFLL_03 ADPOW [Advanced Power Technology], APT10026JFLL_03 Datasheet - Page 2

• Manufacturer Part Number: APT10026JFLL_03
• Description: Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
• Manufacturer: ADPOW [Advanced Power Technology]

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
I
R
R
t
dv
C
t
V
C
RRM
C
I
Q
Q
Q
E
E
d(on)
d(off)
E
E
t
Q
SM
I
SD
S
oss
t
t
rr
/
iss
rss
on
off
on
off
gs
gd
r
rr
JC
f
dt
JA
g
0.25
0.20
0.15
0.10
0.05
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
10
S
S
S
= -38A,
= -38A,
= -38A,
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.05
0.9
0.7
0.5
0.3
0.1
di
di
di
/
/
/
dt
dt
dt
= 100A/µs)
= 100A/µs)
= 100A/µs)
10
-4
3
dv
1
2
/
dt
(Body Diode)
(V
5
6
6
GS
= 0V, I
10
RECTANGULAR PULSE DURATION (SECONDS)
-3
S
= -38A)
SINGLE PULSE
INDUCTIVE SWITCHING @ 125°C
INDUCTIVE SWITCHING @ 25°C
10
4 Starting T
5
6 Eon includes diode reverse recovery. See figures 18, 20.
V
RESISTIVE SWITCHING
-2
V
Test Conditions
DD
dv
device itself.
DD
I
I
D
D
I
I
D
D
/
= 667V, V
dt
= 38A, R
= 38A, R
= 667V V
V
V
= 38A @ 25°C
= 38A @ 25°C
V
V
V
R
V
f = 1 MHz
DD
DD
numbers reflect the limitations of the test circuit rather than the
DS
GS
GS
T
T
T
T
T
T
G
GS
j
j
j
j
j
j
= 0.6
= 500V
= 500V
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25V
= 10V
= 15V
= 0V
j
= +25°C, L = 7.11mH, R
G
G
GS
GS
= 3
= 3
= 15V
I
= 15V
S
10
-1
-
30A
di
/
dt
Note:
MIN
MIN
MIN
Peak T J = P DM x Z JC + T C
700A/µs
Duty Factor D =
1.0
G
= 25 , Peak I
t 1
7114
1268
1196
2014
TYP
TYP
TYP
224
267
173
713
971
2.0
6.0
34
17
39
15
26
t 2
V
8
9
R
t 1
1000
/ t
2
APT10026JFLL
MAX
MAX
MAX
120
310
625
0.21
1.3
L
30
18
40
= 30A
10
T
J
150
Amps
Amps
UNIT
Volts
V/ns
UNIT
UNIT
°C/W
°
µC
ns
C
nC
pF
ns
µ
J