cph6412 Sanyo Semiconductor Corporation, cph6412 Datasheet

cph6412

Manufacturer Part Number

cph6412

Description

N-channel Silicon Mosfet

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.CPH6412.pdf (4 pages)

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Ordering number : ENN7607

Preliminary

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : KN

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

Low ON-resistance.

Ultrahigh-speed switching.

4V drive.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

R DS (on)1

R DS (on)2

R DS (on)3

V GS (off)

Symbol

V GSS

V DSS

I GSS

I DSS

Tstg

I DP

Tch

P D

yfs

I D

Ultrahigh-Speed Switching Applications

I D =1mA, V GS =0

V DS =30V, V GS =0

V GS = 16V, V DS =0

V DS =10V, I D =1mA

V DS =10V, I D =3A

I D =3A, V GS =10V

I D =1.5A, V GS =4.5V

I D =1.5A, V GS =4V

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

CPH6412

Conditions

Package Dimensions

unit : mm

2151A

Conditions

2.9

0.8mm)

0.95

0.4

[CPH6412]

min

N-Channel Silicon MOSFET

1.2

4.2

22004 TS IM TA-100705

Ratings

typ

0.15

Ratings

1 : Drain

2 : Drain

3 : Gate

4 : Source

5 : Drain

6 : Drain

SANYO : CPH6

CPH6412

Continued on next page.

--55 to +150

0.05

max

150

2.6

1.6

No.7607-1/4

Unit

Related parts for cph6412

cph6412 Summary of contents

Page 1

... V DS =30V GSS 16V (off =10V =1mA yfs V DS =10V = (on =3A =10V R DS (on =1.5A =4. (on =1.5A =4V N-Channel Silicon MOSFET CPH6412 [CPH6412] 0. Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 0 ...

Page 2

... See specified Test Circuit See specified Test Circuit =10V =10V =5A Qgs V DS =10V =10V =5A Qgd V DS =10V =10V = =6A =15V OUT CPH6412 S 0.6 0.7 0.8 0.9 1.0 IT06300 80 Ta= ...

Page 3

... Total Gate Charge 2.0 1.6 1.5 1.0 0 100 Ambient Temperature CPH6412 =10V 0.2 0.3 IT06304 1000 V DD =15V =10V 100 7 ...

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2004. Specifications and information herein are subject to change without notice. CPH6412 PS No.7607-4/4 ...

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cph6412 Sanyo Semiconductor Corporation, cph6412 Datasheet

cph6412

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cph6412 Summary of contents

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