cph6302 Sanyo Semiconductor Corporation, cph6302 Datasheet - Page 3
cph6302
Manufacturer Part Number
cph6302
Description
P-channel Mos Silicon Fet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.CPH6302.pdf
(4 pages)
10000
1000
1000
500
400
300
200
100
100
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
10
10
0
-60
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
5
0
0
7
-40
-0.1
20
-5
-20
Drain-to-Source Voltage, V
Ciss,Coss,Crss - V DS
Ambient Temperature, Ta – ˚C
Ambient Temperature, Ta – ˚C
40
2
0
SW Time - I D
-10
Drain Current, I
R DS (on) - Ta
3
60
P D - Ta
20
5
-15
40
80
7
-1.0
D
60
100
t
d(on)
– A
-20
DS
80
2
120
– V
3
100
V
V
-25
DD
GS
f =1MHz
140
5
=–10V
120
=–15V
Ciss
CPH6302
7
-30
140
-10
160
-0.001
-0.01
-0.01
-1.0
-0.1
-10
-1.0
-0.1
-10
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
-0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
Mounted on a ceramic board (900mm
V
Ta=25 C
1 Pulse
V
I
I
D
GS
DP
DS
=–3A
-0.1
2 3
=–12A
=0
=–10V
-2
-0.2
Operation in this area
is limited by R
5 7
Drain-to-Source Voltage, V
Diode Forward Voltage, V
Total Gate Charge, Qg – nC
-0.1
-0.3
-4
2 3
V GS - Q g
I F - V SD
-0.4
A S O
DS
5
-0.5
(on).
-6
I
7
D
-1.0
=–3A
-0.6
2 3
-8
SD
DS
-0.7
5 7
– V
– V
-0.8
-10
-10
100 s
-0.9
No.5939-3/4
2 3
-12
-1.0
5