mch3333 Sanyo Semiconductor Corporation, mch3333 Datasheet

mch3333

Manufacturer Part Number

mch3333

Description

P-channel Silicon Mosfet

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.MCH3333.pdf (4 pages)

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Ordering number : ENN7989

MCH3333

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : YJ

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

•

Low ON-resistance.

Ultrahigh-speed switching.

2.5V drive.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

R DS (on)1

R DS (on)2

V GS (off)

Symbol

V GSS

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

V DSS

t d (on)

t d (off)

I GSS

I DSS

Coss

Ciss

Crss

Tstg

I DP

Tch

P D

yfs

I D

t r

t f

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

I D =

V DS =

V GS = 8V, V DS =0

V DS =

I D =

V DS =

See specified Test Circuit.

1mA, V GS =0

0.8A, V GS =

0.4A, V GS =

MCH3333

30V, V GS =0

10V, I D =

10V, f=1MHz

- -

Conditions

1mA

0.8A

2.5V

Conditions

0.8mm)

min

1.38

N2504 TS IM TA-101104

0.4

Ratings

typ

Ratings

215

290

285

2.3

--55 to +150

Continued on next page.

max

--1.5

--6.0

150

0.9

280

410

1.4

No.7989-1/4

Unit

Related parts for mch3333

mch3333 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN MCH3333 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

Page 2

... Switching Time Test Circuit --15V -- --0. PW= --10V 0 0 --0.5 --1.0 --1.5 Gate-to-Source Voltage (on --60 --40 -- 100 Ambient Temperature Unit 1 =18.75 V OUT MCH3333 --2.0 --2.5 IT07535 120 140 160 IT07537 No.7989-2/4 ...

Page 3

... Drain Current --4 --10V --1.5A --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0 Total Gate Charge 1.0 0.9 0.8 0.6 0.4 0 100 Ambient Temperature MCH3333 -- --1 --0 --0. --0.001 --1.0 --0.4 IT07538 1000 --10V --4V ...

Page 4

... Note on usage : Since the MCH3333 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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