ntgs3443b ON Semiconductor, ntgs3443b Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/4/495/on_semiconductor_sml.jpg)
ntgs3443b
Manufacturer Part Number
ntgs3443b
Description
Power Mosfet -20 V, -4.2 A, Single P-channel, Tsop-6
Manufacturer
ON Semiconductor
Datasheet
1.NTGS3443B.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ntgs3443bT1G
Manufacturer:
ONSemico
Quantity:
98 000
Part Number:
ntgs3443bT1G
Manufacturer:
ON/安森美
Quantity:
20 000
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
7
6
5
4
3
2
1
0
0
-50
Q
GS
Drain-to-Source Voltage vs. Total Charge
-25
2
-V
T
Figure 7. Gate-to-Source and
Q
J
DS
G
, JUNCTION TEMPERATURE (°C)
Q
Figure 9. Threshold Voltage
0
, TOTAL GATE CHARGE (nC)
GD
4
TYPICAL PERFORMANCE CURVES
25
QT
50
0.01
6
100
0.1
10
1
0.1
75
V
SINGLE PULSE
T
C
GS
Figure 11. Maximum Rated Forward Biased
= 25°C
8
= -12 V
V
I
T
-V
I
D
100
D
J
-V
DS
= -3.7 A
= 25°C
= -250 mA
DS
R
Thermal Limit
Package Limit
GS
= -10 V
DS(on)
, DRAIN-TO-SOURCE VOLTAGE (V)
125
10
Safe Operating Area
http://onsemi.com
LIMIT
1
NTGS3443B
150
12
10
4
2
0
8
6
4
1.0
60
50
40
30
20
10
(T
30
10
0.001
0
0.0
J
10
= 25°C unless otherwise noted)
V
Figure 8. Diode Forward Voltage vs. Current
GS
-V
Figure 10. Single Pulse Maximum Power
0.2
= 0 V
SD
0.01
100 ms
1 ms
10 ms
dc
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
T
J
0.4
= 150°C
SINGLE PULSE TIME (s)
0.1
100
Dissipation
0.6
1
0.8
T
J
10
= 25°C
1.0
100
1.2
1000
1.4