ntgs3443b ON Semiconductor, ntgs3443b Datasheet - Page 2
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ntgs3443b
Manufacturer Part Number
ntgs3443b
Description
Power Mosfet -20 V, -4.2 A, Single P-channel, Tsop-6
Manufacturer
ON Semiconductor
Datasheet
1.NTGS3443B.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ntgs3443bT1G
Manufacturer:
ONSemico
Quantity:
98 000
Part Number:
ntgs3443bT1G
Manufacturer:
ON/安森美
Quantity:
20 000
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq).
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
THERMAL RESISTANCE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 6)
DRAIN-SOURCE DIODE CHARACTERISTICS
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t v 5 s (Note 3)
Junction-to-Ambient – Steady State (Note 4)
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain-to-Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Parameter
Parameter
(T
J
= 25°C unless otherwise specified)
V
V
V
(BR)DSS
Symbol
V
GS(TH)
Q
R
Q
t
(BR)DSS
C
C
t
d(OFF)
GS(TH)
I
I
C
G(TOT)
Q
Q
d(ON)
DS(on)
V
g
DSS
GSS
G(TH)
R
t
OSS
RSS
RR
FS
ISS
t
t
SD
GS
GD
G
r
f
http://onsemi.com
/T
/T
NTGS3443B
J
J
V
2
GS
I
V
D
V
I
V
V
V
V
S
DS
GS
= -250 mA, Reference 25°C
V
V
V
= 0 V, f = 1 MHz, V
V
GS
GS
GS
GS
V
V
V
I
= -1.7 A
GS
GS
GS
D
GS
GS
DS
DS
= -20 V
= 0 V, d
= -1.0 A, R
= 0 V,
= -4.5 V, V
= -4.5 V, V
= 0 V,
= -2.7 V, I
Test Condition
= V
= -4.5 V, I
= -2.5 V, I
= 0 V, I
= -10 V, I
= 0 V, V
I
I
D
S
DS
= -1.7 A
= -3.7 A
IS
, I
D
/d
D
GS
= -250 mA
t
= -250 mA
D
DS
DD
G
D
D
D
= 100 A/ms,
= ±12 V
Symbol
= -3.1 A
=-3.7 A
= 6.0 W
= -3.7 A
= -3.0 A
= -10 V;
= -10 V,
R
R
R
DS
T
T
T
qJA
qJA
qJA
J
J
J
= -10 V
= 25°C
= 70°C
= 25°C
-0.6
Min
-20
Value
-0.8
Typ
-15
819
157
103
100
190
3.3
7.0
8.0
0.6
1.7
2.4
7.0
45
65
70
10
47
25
15
11
80
$0.1
Max
-1.0
-5.0
-1.4
-1.2
100
60
90
15
70
40
30
11
11
mV/°C
mV/°C
°C/W
Unit
Unit
mW
mA
mA
nC
pF
ns
ns
W
V
V
S
V