cph3425 Sanyo Semiconductor Corporation, cph3425 Datasheet

cph3425

Manufacturer Part Number

cph3425

Description

N-channel Silicon Mosfet

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.CPH3425.pdf (4 pages)

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5Ordering number : ENN7529

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : ZA

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

Low ON-resistance.

Ultrahigh-speed switching.

4V drive.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

R DS (on)1

R DS (on)2

V GS (off)

Symbol

V GSS

V DSS

I GSS

I DSS

Tstg

I DP

Tch

P D

yfs

I D

Ultrahigh-Speed Switching Applications

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

I D =1mA, V GS =0

V DS =100V, V GS =0

V GS = 16V, V DS =0

V DS =10V, I D =1mA

V DS =10V, I D =250mA

I D =250mA, V GS =10V

I D =250mA, V GS =4V

CPH3425

Conditions

Package Dimensions

unit : mm

2152A

Conditions

2.9

1.9

0.8mm)

0.4

[CPH3425]

min

N-Channel Silicon MOSFET

100

1.2

0.4

22004 TS TA-100224

Ratings

typ

Ratings

0.15

1 : Gate

2 : Source

3 : Drain

SANYO : CPH3

0.8

1.4

1.8

CPH3425

--55 to +150

Continued on next page.

0.05

max

1.85

100

150

0.5

0.9

2.6

2.5

No.7529-1/4

Unit

Related parts for cph3425

cph3425 Summary of contents

Page 1

... V DS =100V GSS 16V (off =10V =1mA yfs V DS =10V =250mA R DS (on =250mA =10V R DS (on =250mA =4V N-Channel Silicon MOSFET CPH3425 [CPH3425] 2.9 0.15 0 Gate 2 : Source 3 : Drain SANYO : CPH3 Ratings 100 0 ...

Page 2

... See specified Test Circuit See specified Test Circuit =50V =10V =0.5A Qgs V DS =50V =10V =0.5A Qgd V DS =50V =10V =0. =0.5A =50V I D =0.25A R L =200 D V OUT CPH3425 S 1.0 0.8 0.6 0.4 0.2 1.0 1.2 1.4 1.6 IT05985 4.0 Ta= =0.25A 3.5 3 ...

Page 3

... Drain Current =50V I D =0. 0.5 1.0 1.5 2.0 Total Gate Charge 1.2 1.0 0.9 0.8 0.6 0.4 0 100 Ambient Temperature CPH3425 1 =10V 0 0. 1.0 0.2 IT05989 3 2 100 1 1.0 IT05991 ...

Page 4

... Note on usage : Since the CPH3425 is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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