h57v2562gtr Hynix Semiconductor, h57v2562gtr Datasheet - Page 16

• Manufacturer Part Number: h57v2562gtr
• Description: 256mb Synchronous Dram Based 4bank
• Manufacturer: Hynix Semiconductor

CURRENT STATE TRUTH TABLE
Rev 1.0 / Aug. 2009
Current
State
Active
Read
Row
idle
CS RAS CAS WE
H
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
H
H
H
X
H
H
H
X
H
H
H
L
L
L
L
L
L
L
L
L
L
L
L
H
H
H
H
H
H
H
H
H
L
L
L
L
X
L
L
L
L
X
L
L
L
L
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
X
L
L
L
X
L
L
L
BA0/
BA1
BA
BA
BA
BA
BA
BA
BA
BA
BA
BA
BA
BA
X
X
X
X
X
X
X
X
Command
OP CODE
OP CODE
OP CODE
A
Row Add.
Row Add.
Row Add.
Col Add.
Col Add.
Col Add.
Col Add.
Col Add.
Col Add.
max
A10
A10
A10
A10
A10
A10
(Sheet 1 of 4)
X
X
X
X
X
X
X
X
X
X
X
-A0
Mode Register Set
Auto or Self Refresh
Precharge
Bank Activate
Write/WriteAP
Read/ReadAP
No Operation
Device Deselect
Mode Register Set
Auto or Self Refresh
Precharge
Bank Activate
Write/WriteAP
Read/ReadAP
No Operation
Device Deselect
Mode Register Set
Auto or Self Refresh
Precharge
Bank Activate
Write/WriteAP
Read/ReadAP
No Operation
Description
Synchronous DRAM Memory 256Mbit
Set the Mode Register
Start Auto or Self Refresh
No Operation
Activate the specified
bank and row
ILLEGAL
ILLEGAL
No Operation
No Operation or Power
Down
ILLEGAL
ILLEGAL
Precharge
ILLEGAL
Start Write : optional
AP(A10=H)
Start Read : optional
AP(A10=H)
No Operation
No Operation
ILLEGAL
ILLEGAL
Termination Burst: Start
the Precharge
ILLEGAL
Termination Burst: Start
Write(optional AP)
Termination Burst: Start
Read(optional AP)
Continue the Burst
H57V2562GTR Series
Action
Notes
16
8,9
13
13
13
13
5
4
4
3
3
7
4
6
6
4
8