upa2610 Renesas Electronics Corporation., upa2610 Datasheet - Page 5

• Manufacturer Part Number: upa2610
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

10000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1000
150
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
150
100
100
50
50
10
0
0
-0.1
-50
-0.1
V
Pulsed
t
t
GS
t
t
V
d(off)
d(on)
f
r
GS
SWITCHING CHARACTERISTICS
T
= −1.8 V
ch
= − 1.8 V
- Channel Temperature - °C
− 2.5 V
− 4.5 V
0
I
I
D
D
- Drain Current - A
- Drain Current - A
-1
50
-1
-10
V
V
R
T
G
DD
GS
100
A
I
Pulsed
= 10 Ω
D
= 125°C
= − 10.0 V
= − 4.0 V
= − 1.5 A
−25°C
75°C
25°C
Data Sheet G16836EJ1V0DS
-100
150
-10
10000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
150
100
100
50
10
-6
-5
-4
-3
-2
-1
0
0
-0.1
0
0
DYNAMIC INPUT CHARACTERISTICS
I
V
f = 1.0 MHz
D
GS
V
= −5.0 A
DS
V
V
= 0 V
DD
1
GS
- Drain to Source Voltage - V
Q
= −4.0 V
- Gate to Source Voltage - V
-2
−10.0 V
−16.0 V
G
- Gate Charge - nC
-1
2
-4
3
-10
4
-6
I
Pulsed
D
µ
= −1.5 A
C
C
C
5
iss
oss
rss
PA2610
-100
-8
6
5