upa2610 Renesas Electronics Corporation., upa2610 Datasheet

no-image

upa2610

Manufacturer Part Number
upa2610
Description
P-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. G16836EJ1V0DS00 (1st edition)
Date Published March 2004 NS CP(K)
Printed in Japan
DESCRIPTION
as power switch of portable machine and so on.
FEATURES
• Thin surface mount package with heat spreader
• 1.8 V drive available
• Low on-state resistance
ORDERING INFORMATION
Marking: Axxx (xxx: Traceability code)
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1. Mounted on FR-4 board of 645 mm
The
R
R
R
DS(on)1
DS(on)2
DS(on)3
µ
2. PW ≤ 10
3. Without board
PA2610, which has a heat spreader, is P-channel MOS Field Effect Transistor designed for applications such
PART NUMBER
µ
= 69 mΩ MAX. (V
= 88 mΩ MAX. (V
= 142 mΩ MAX. (V
PA2610T1C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
µ
Note1
s, Duty Cycle ≤ 1%
Note2
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
Note3
Note1
DS
GS
GS
GS
GS
= 0 V)
= 0 V)
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
8LD3x2MLPM
D
D
PACKAGE
D
= −2.5 A)
= −2.5 A)
= −1.5 A)
A
= 25°C)
FOR SWITCHING
2
DATA SHEET
x 1.6 mm, PW ≤ 10 sec
I
D(pulse)
I
V
V
D(DC)
P
P
T
T
DSS
GSS
stg
T1
T2
ch
MOS FIELD EFFECT TRANSISTOR
−55 to +150
−20.0
m20.0
m8.0
m5.0
150
0.2
1.9
°C
°C
W
W
V
V
A
A
µ
PA2610
2004

Related parts for upa2610

upa2610 Summary of contents

Page 1

P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION µ The PA2610, which has a heat spreader, is P-channel MOS Field Effect Transistor designed for applications such as power switch of portable machine and so on. FEATURES • Thin surface mount package with ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - °C A FORWARD BIAS SAFE OPERATING AREA -100 R Limited ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -20 Pulsed -16 = −4 -12 −2 −1 -0 Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. CHANNEL ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 150 V = −1 Pulsed 100 T = 125°C A 75°C 25°C −25° -0 Drain Current - A D DRAIN TO SOURCE ON-STATE RESISTANCE ...

Page 6

SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed 10 1 0.1 0.01 0.4 0.6 0 Source to Drain Voltage - V F(S-D) 6 1.4 1.6 Data Sheet G16836EJ1V0DS µ PA2610 ...

Page 7

PACKAGE DRAWING (Unit: mm) 0.65BSC 8 1 0.2 to 0.45 This area has connected and 8 pin internal. 1.01±0.1 1.5±0.1 EQUIVALENT CIRCUIT ...

Page 8

EXAMPLE OF THE LAND PATTERN Please optimize the land pattern in consideration of density, appearance of solder fillets, common difference, etc in an actual design. 0.67 8 3.55 1.80 0. 0.65 0.40 Data Sheet G16836EJ1V0DS µ PA2610 (Unit: ...

Page 9

The information in this document is current as of March, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

Related keywords