upa2451tl Renesas Electronics Corporation., upa2451tl Datasheet - Page 3
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upa2451tl
Manufacturer Part Number
upa2451tl
Description
N-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2451TL.pdf
(8 pages)
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Quantity
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TYPICAL CHARACTERISTICS (T
1.5
100
1.0
0.5
50
40
60
30
10
20
80
60
40
20
0
50
0
0.0
0
V
I
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
D
Pulsed
DS
= 1 mA
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
= 10 V
T
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
ch
0.2
30
DS
T
0
- Channel Temperature - ˚C
A
- Drain to Source Voltage - V
- Ambient Temperature - ˚C
0.4
60
50
V
0.6
90
GS
= 4.5 V
A
2.5 V
100
= 25°C)
120
0.8
Data Sheet G15621EJ1V0DS
150
150
1.0
0.0001
1000
0.01
0.001
0.01
100
100
0.1
0.01
0.1
10
10
100
0.1
1
1
0.1
10
0.01
1
Single Pulse
PD (FET1):PD (FET2) =1:1
V
Pulsed
FORWARD BIAS SAFE OPERATING AREA
0
V
FORWARD TRANSFER CHARACTERISTICS
Pulsed
DS
DRAIN CURRENT
FORWARD TRANSFER ADMITTANCE vs.
DS =
= 10 V
V
0.5
10 V
DS
V
0.1
GS
- Drain to Source Voltage - V
I
D
- Gate to Sorce Voltage - V
1
- Drain Current - A
1.0
1
1.5
T
A
10
= 75 ˚C
2.0
25 ˚C
25 ˚C
10
2.5
PA2451
100
100
3.0
3