upa2451tl Renesas Electronics Corporation., upa2451tl Datasheet - Page 2
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upa2451tl
Manufacturer Part Number
upa2451tl
Description
N-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2451TL.pdf
(8 pages)
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Quantity
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ELECTRICAL CHARACTERISTICS (T
2
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
0
TEST CIRCUIT 1 SWITCHING TIME
GS
Duty Cycle
PG.
= 1 s
CHARACTERISTICS
R
1%
G
D.U.T.
R
V
DD
L
V
Wave Form
V
Wave Form
GS
DS
SYMBOL
R
R
R
R
V
V
| y
V
V
t
t
Q
Q
I
I
DS(on)1
DS(on)2
DS(on)3
DS(on)4
C
C
GS(off)
C
Q
A
GSS
d(on)
d(off)
F(S-D)
Q
V
DSS
t
GS
DS
t
t
oss
GS
GD
rr
fs
iss
rss
0
DS
0
r
f
G
rr
= 25°C)
10%
|
t
d(on)
90%
Data Sheet G15621EJ1V0DS
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
R
V
V
I
I
I
di/dt = 100 A / s
t
on
D
F
F
DS
GS
DS
DS
GS
GS
GS
GS
DS
GS
DD
GS
DD
GS
G
= 8.2 A, V
= 8.2 A, V
= 8.2 A
10% 10%
t
= 6.0
r
= 30 V, V
= 10 V, I
= 10 V, I
= 10 V
= 15 V, I
= 24 V
= ±12 V, V
= 4.5 V, I
= 4.0 V, I
= 3.1 V, I
= 2.5 V, I
= 0 V
= 10 V
= 4.0 V
V
t
GS
d(off)
TEST CONDITIONS
GS
GS
D
D
D
t
off
D
D
D
D
GS
90%
= 1.0 mA
= 4.0 A
= 4.0 A
DS
= 4.0 A
= 4.0 A
= 4.0 A
= 4.0 A
= 0 V
= 0 V
90%
t
= 0 V
f
= 0 V
TEST CIRCUIT 2 GATE CHARGE
PG.
MIN.
12.5
15.5
0.5
5.0
12
14
I
G
50
= 2 mA
TYP.
16.5
18.5
22.5
0.84
540
150
360
160
160
200
1.0
9.0
1.5
4.5
16
80
17
45
D.U.T.
MAX.
±10
1.5
10
20
21
25
32
UNIT
PA2451
m
m
m
m
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
A
A
R
V
DD
L