upa2450c Renesas Electronics Corporation., upa2450c Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/5/561/renesas_electronics_corporation__sml.jpg)
upa2450c
Manufacturer Part Number
upa2450c
Description
Mos Field Effect Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2450C.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
upa2450cTL-E1-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
1000
0.01
100
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0.1
40
30
20
10
10
10
0
1
-50
0.1
0
V
Pulsed
V
GS
t
GS
SWITCHING CHARACTERISTICS
t
V
d(off)
f
= 0 V
F(S-D)
0.2
T
= 2.5 V
ch
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
3.1 V
4.0 V
4.5 V
- Channel Temperature - ° C
0
- Source to Drain Voltage - V
I
D
0.4
- Drain Current - A
50
0.6
1
t
t
r
d(on)
0.8
V
V
R
100
I
Pulsed
DD
GS
G
D
= 6 Ω
= 4.0 A
= 10.0 V
= 4.0 V
1
Data Sheet G18792EJ1V0DS
150
10
1.2
1000
100
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10
4
3
2
1
0
0.1
0
DYNAMIC INPUT CHARACTERISTICS
V
V
f = 1.0 MHz
DD
GS
= 4.0 V
= 0 V
10.0 V
16.0 V
V
DS
2
Q
- Drain to Source Voltage - V
G
- Gate Charge - nC
1
4
10
6
I
μ
D
C
C
C
= 8.6 A
iss
oss
rss
PA2450C
100
8
5