upa2450c Renesas Electronics Corporation., upa2450c Datasheet - Page 2

• Manufacturer Part Number: upa2450c
• Description: Mos Field Effect Transistor
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
Note Pulsed: PW ≤ 350
2
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
0
TEST CIRCUIT 1 SWITCHING TIME
GS
τ = 1 s
Duty Cycle ≤ 1%
PG.
μ
τ
CHARACTERISTICS
R
G
D.U.T.
μ
s, Duty Cycle ≤ 2%
Note
Note
R
V
DD
L
Note
V
Wave Form
V
Wave Form
GS
DS
I
I
V
| y
R
R
R
R
C
C
C
t
t
t
t
Q
Q
Q
V
SYMBOL
DSS
GSS
d(on)
r
d(off)
f
GS(off)
F(S-D)
DS(on)1
DS(on)2
DS(on)3
DS(on)4
iss
oss
rss
G
GS
GD
fs
V
V
V
|
GS
DS
A
0
DS
0
10%
t
= 25°C)
d(on)
90%
Data Sheet G18792EJ1V0DS
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
I
V
R
V
V
I
I
t
D
D
F
on
DS
GS
DS
DS
GS
GS
GS
GS
DS
GS
DD
GS
G
DD
GS
= 8.6 A, V
= 4.0 A,
= 8.6 A
10% 10%
t
= 6 Ω
r
= 20.0 V, V
= 10.0 V, I
= 10.0 V, I
= 10.0 V,
= ±12.0 V, V
= 4.5 V, I
= 4.0 V, I
= 3.1 V, I
= 2.5 V, I
= 0 V,
= 10.0 V,
= 4.0 V,
= 16.0 V,
= 4.0 V,
V
t
GS
TEST CONDITIONS
d(off)
GS
t
off
D
D
D
D
90%
D
D
= 0 V
= 4.0 A
= 4.0 A
= 4.0 A
= 4.0 A
GS
90%
t
= 1.0 mA
= 4.0 A
f
DS
= 0 V
= 0 V
TEST CIRCUIT 2 GATE CHARGE
PG.
MIN.
0.50
11.0
11.5
12.0
15.3
3.5
I
G
50 Ω
= 2 mA
TYP.
12.5
13.0
14.5
18.0
26.5
0.82
564
102
136
6.0
1.3
2.3
64
81
97
D.U.T.
±10.0
MAX.
1.50
17.5
18.5
22.0
27.5
μ
1.0
PA2450C
UNIT
mΩ
mΩ
mΩ
mΩ
μ
μ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
S
V
A
A
R
V
DD
L