upa2352b Renesas Electronics Corporation., upa2352b Datasheet - Page 2

• Manufacturer Part Number: upa2352b
• Description: Dual N-channel Mosfet
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
Note Pulsed
Both the FET1 and the FET2 are measured. Test circuits are example of measuring the FET1 side.
2
Zero Gate Voltage Source Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Source to Source On-state
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Body Diode Forward Voltage
TEST CIRCUIT 1 I
TEST CIRCUIT 3 V
When FET1 is
measured, between
GATE and SOURCE
of FET2 are shorted.
CHARACTERISTICS
Note
SSS
GS(off)
V
Note
Note
GS
G1
G2
G1
G1
G2
G2
I
I
V
| y
R
R
R
R
C
C
C
t
t
t
t
Q
V
S2
SSS
GSS
d(on)
r
d(off)
f
SYMBOL
GS(off)
F(S-S)
SS(on)1
SS(on)2
SS(on)3
SS(on)4
iss
oss
rss
G
fs
|
S2
S2
S1
A
S1
S1
= 25°C) These are common to FET1 and FET2.
A
V
V
V
V
V
V
V
V
V
TEST CIRCUIT 7
V
V
TEST CIRCUIT 8
V
TEST CIRCUIT 9
I
Data Sheet G19314EJ1V0DS
A
F
A
SS
GS
SS
SS
GS
GS
GS
GS
SS
DD
GS
DD
= 4.0 A, V
V
V
= 24 V, V
= 10.0 V, I
= 10.0 V, I
= 10.0 V, V
= ±12 V, V
= 4.5 V, I
= 4.0 V, I
= 3.1 V, I
= 2.5 V, I
= 20.0 V, I
= 4.0 V, R
= 16 V, V
SS
SS
TEST CIRCUIT 2 I
When FET1 is
measured, between
GATE and SOURCE
of FET2 are shorted.
TEST CIRCUIT 4 | y
ΔI
TEST CONDITIONS
GS
S
GS
S
S
S
S
G1S1
/ΔV
G
S
S
S
= 0 V, TEST CIRCUIT 6
SS
= 2.0 A, TEST CIRCUIT 5
= 2.0 A, TEST CIRCUIT 5
= 2.0 A, TEST CIRCUIT 5
= 2.0 A, TEST CIRCUIT 5
GS
= 1.0 mA, TEST CIRCUIT 3
= 2.0 A, TEST CIRCUIT 4
= 0 V, TEST CIRCUIT 1
= 4.0 A,
= 6.0 Ω,
= 0 V, TEST CIRCUIT 2
= 4.0 V, I
= 0 V, f = 1.0 MHz
GS
S
= 4.0 A,
GSS
fs
|
V
V
GS
GS
G1
G1
G2
G2
MIN.
24.0
25.0
31.5
33.5
0.5
1.8
A
A
G2
G2
G1
G1
TYP.
35.0
37.0
43.0
55.0
S2
S2
720
130
1.0
2.5
5.3
5.6
7.1
5.0
1.0
80
S1
S1
μ
S2
PA2352B
MAX.
43.0
45.0
55.0
67.0
±10
S1
S1
1.5
A
10
A
V
SS
UNIT
mΩ
mΩ
mΩ
mΩ
μ
μ
pF
pF
pF
nC
μ
μ
μ
μ
V
S
V
A
A
s
s
s
s