upa2352b Renesas Electronics Corporation., upa2352b Datasheet

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upa2352b

Manufacturer Part Number
upa2352b
Description
Dual N-channel Mosfet
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. G19314EJ1V0DS00 (1st edition)
Date Published July 2008 NS
Printed in Japan
DESCRIPTION
Lithium-Ion battery protection circuit.
(EFLIP).
FEATURES
ORDERING INFORMATION
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
Remark "-E4" indicates the unit orientation (E4 only).
ABSOLUTE MAXIMUM RATINGS (T
Source to Source Voltage (V
Gate to Source Voltage (V
Source Current (DC)
Source Current (pulse)
Total Power Dissipation (2 units)
Channel Temperature
Storage Temperature
Notes 1. Mounted on BT resin board of 40.5 mm x 25 mm x 1.5 mmt
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
The
Ecologically Flip chip MOSFET for Lithium-Ion battery Protection
Connecting the Drains on the circuit board is not required
because the Drains of the FET1 and the FET2 are internally
connected.
Monolithic Dual MOSFET
2.5 V drive available and low on-state resistance
R
R
R
R
Built-in G-S protection diode against ESD
Pb-free Bump
SS(on)1
SS(on)2
SS(on)3
SS(on)4
μ
μ
2. PW ≤ 100
PA2352BT1G-E4-A
PA2352B is a Dual N-channel MOSFET designed for
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
PART NUMBER
= 43.0 mΩ MAX. (V
= 45.0 mΩ MAX. (V
= 55.0 mΩ MAX. (V
= 67.0 mΩ MAX. (V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
μ
Note1
s, Duty Cycle ≤ 1%
Note2
Note
SS
GS
= 0 V)
GS
GS
GS
GS
= 0 V)
Note1
= 4.5 V, I
= 4.0 V, I
= 3.1 V, I
= 2.5 V, I
DUAL N-CHANNEL MOSFET
V
V
I
I
P
T
T
S(DC)
S(pulse)
SSS
GSS
T
ch
stg
S
S
S
S
A
= 2.0 A)
= 2.0 A)
= 2.0 A)
= 2.0 A)
= 25°C)
4-pin EFLIP
PACKAGE
DATA SHEET
−55 to +150
±4.0
0.75
±12
±33
150
24
MOS FIELD EFFECT TRANSISTOR
°C
°C
W
V
V
A
A
1-pin index mark S1
Source 1
S
0.08 S
OUTLINE DRAWING (Unit: mm)
Gate 1
FET1
1.33 ± 0.02
TOP VIEW
μ
EQUIVALENT CIRCUIT
Dot area (For in-house)
//
PA2352B
Body Diode
0.1
S
0.2 ± 0.02
0.28 ± 0.03
BOTTOM VIEW
G1
G2
FET2
Gate 2
0.65
Source 2
S1
S2
S1: Source 1
G1: Gate 1
G2: Gate 2
S2: Source 2
4 -
Gate
Protection
Diode
φ
2008
0.37
0.65

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upa2352b Summary of contents

Page 1

DESCRIPTION μ The PA2352B is a Dual N-channel MOSFET designed for Lithium-Ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection (EFLIP). FEATURES • Monolithic Dual MOSFET Connecting the Drains on the circuit board is not required because ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Source Current I SSS Gate Leakage Current I GSS Gate to Source Cut-off Voltage V GS(off) Note Forward Transfer Admittance | y fs Source to Source On-state R SS(on)1 Note Resistance R ...

Page 3

TEST CIRCUIT 5 R SS(on TEST CIRCUIT 7 C iss Capacitance Capacitance Bridge Bridge S1 S1 TEST ...

Page 4

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA 1000 100 I ...

Page 5

SOURCE CURRENT vs. SOURCE TO SOURCE VOLTAGE 40 TEST CIRCUIT 5 4.0 V Pulsed 0.5 1 1 Source to Source Voltage - ...

Page 6

SOURCE TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 TEST CIRCUIT 2 Pulsed ...

Page 7

The information in this document is current as of July, 2008. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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