upa2510tm Renesas Electronics Corporation., upa2510tm Datasheet - Page 2

• Manufacturer Part Number: upa2510tm
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
Note Pulsed: PW ≤ 350
2
TEST CIRCUIT 1 AVALANCHE CAPABILITY
V
TEST CIRCUIT 3 GATE CHARGE
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
PG.
= −20 → 0 V
−
I
CHARACTERISTICS
PG.
G
V
= −2 mA
50 Ω
DD
I
R
D
D.U.T.
G
= 25 Ω
50 Ω
I
AS
D.U.T.
BV
µ
s, Duty Cycle ≤ 2%
Note
DSS
Note
Starting T
V
R
V
DS
DD
L
Note
L
V
ch
DD
SYMBOL
R
R
V
V
| y
t
t
I
DS(on)1
DS(on)2
C
Q
Q
I
C
C
GS(off)
d(on)
d(off)
Q
F(S-D)
Q
DSS
GSS
t
t
t
oss
GD
A
fs
iss
rss
GS
rr
r
f
G
rr
|
= 25°C)
Data Sheet G16683EJ1V0DS
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
R
V
V
I
I
I
di/dt = 100 A/
V
D
F
F
0
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS
G
DD
GS
GS
= 18.0 A, V
= 18.0 A, V
= −18.0 A
τ = 1 s
Duty Cycle ≤ 1%
PG.
= 10 Ω
(−)
= −30.0 V, V
= −10.0 V, I
= −10.0 V, I
= −10.0 V
= m20.0 V, V
= −10.0 V, I
= −4.5 V, I
= 0 V
= −15.0 V, I
= −10.0 V
= −24.0 V
= −10.0 V
TEST CIRCUIT 2 SWITCHING TIME
µ
TEST CONDITIONS
τ
GS
GS
µ
R
D
s
G
D
D
D
D
= 0 V
= 0 V
= −9.0 A
GS
DS
= −1.0 mA
= −9.0 A
= −9.0 A
= −9.0 A
D.U.T.
= 0 V
= 0 V
R
V
DD
L
V
Wave Form
V
Wave Form
GS
DS
MIN.
−1.0
12
V
V
V
GS
DS
DS
0
0
TYP.
3000
0.85
940
500
270
170
(−)
7.5
9.5
(−)
12
18
70
22
80
68
10%
t
8
90%
d(on)
t
on
10%
m10.0
t
MAX.
−1.0
−2.5
10.1
14.0
r
V
GS
t
10%
d(off)
µ
t
PA2510
off
90%
UNIT
90%
mΩ
mΩ
t
µ
µ
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
f
V
S
V
A
A