upa2510tm Renesas Electronics Corporation., upa2510tm Datasheet
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upa2510tm
Manufacturer Part Number
upa2510tm
Description
P-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2510TM.pdf
(7 pages)
Document No. G16683EJ1V0DS00 (1st edition)
Date Published December 2003 NS CP(K)
Printed in Japan
DESCRIPTION
MOS Field Effect Transistor designed for power management
applications of notebook computers.
FEATURES
•
• Low on-state resistance
• Low C
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. Mounted on FR-4 board of 25 cm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
The
R
R
spreader. The land size is same as 8-pin TSSOP.
µ
DS(on)1
DS(on)2
PA2510 has a thin surface mount package with a heat
µ
2. PW ≤ 10
3. Starting T
PA2510, which has a heat spreader, is P-channel
PART NUMBER
iss
µ
= 10.1 mΩ MAX. (V
= 14.0 mΩ MAX. (V
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
: 3000 pF TYP. (V
PA2510TM
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
µ
Note1
ch
s, Duty Cycle ≤ 1%
Note2
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
= 25°C, V
Note1
Note3
Note3
DS
GS
DS
GS
GS
= 0 V)
= 0 V)
= −10.0 V, V
DD
= −10.0 V, I
= −4.5 V, I
= −30 V, R
8PIN HWSON
PACKAGE
D
GS
D
A
2
= −9.0 A)
x 1.6 mm, PW ≤ 10 sec
= −9.0 A)
= 25°C)
FOR SWITCHING
G
= 0 V)
DATA SHEET
= 25 Ω, V
I
D(pulse)
V
I
V
D(DC)
T
E
T
P
I
DSS
GSS
AS
stg
AS
ch
T
GS
MOS FIELD EFFECT TRANSISTOR
= −20.0 → 0 V
−55 to +150
−30.0
m20.0
m18.0
m72.0
−18.0
32.4
0.75 ±0.15
150
2.7
PACKAGE DRAWING (Unit: mm)
mJ
1
2
3
4
°C
°C
W
V
V
A
A
A
5.8 ±0.1
6.4 ±0.1
4.15 ±0.2
8
7
6
5
EQUIVALENT CIRCUIT
µ
Gate
Gate
Protection
Diode
0.85 ±0.15
PA2510
1, 2, 3
4
5, 6, 7, 8: Drain
Source
Drain
: Source
: Gate
Body
Diode
0.10 S
2003