upa2503tm Renesas Electronics Corporation., upa2503tm Datasheet - Page 4

• Manufacturer Part Number: upa2503tm
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
2.4
1.6
1.2
0.8
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
80
60
40
20
25
20
15
10
2
0
5
0
-50
0.1
0
Pulsed
Pulsed
V
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
T
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
DS
GS
0.2
ch
- Drain to Source Voltage - V
- Channel Temperature - °C
= 10.0 V
0
I
D
V
- Drain Current - A
GS
1
0.4
= 4.5 V
10.0 V
50
0.6
10
V
I
D
DS
100
4.5 V
= 1.0 mA
0.8
= 10.0 V
Data Sheet G16682EJ1V0DS
150
100
1
0.001
0.01
0.01
100
100
0.1
0.1
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
25
20
15
10
10
1
5
0
1
0.01
FORWARD TRANSFER CHARACTERISTICS
0
1
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
Pulsed
V
Pulsed
DS
DS
1.5
V
V
= 10.0 V
= 10.0 V
GS
GS
- Gate to Source Voltage - V
0.1
- Gate to Source Voltage - V
5
I
D
2
- Drain Current - A
2.5
10
1
T
A
3
= −25°C
T
125°C
A
25°C
75°C
= 125°C
3.5
10
−25°C
15
I
Pulsed
75°C
25°C
D
= 8.0 A
µ
4
PA2503
100
4.5
20