upa2503tm Renesas Electronics Corporation., upa2503tm Datasheet

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upa2503tm

Manufacturer Part Number
upa2503tm
Description
N-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. G16682EJ1V0DS00 (1st edition)
Date Published December 2003 NS CP(K)
Printed in Japan
DESCRIPTION
MOS Field Effect Transistor designed for power management
applications of notebook computers.
FEATURES
• Low on-state resistance
• Low C
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. Mounted on FR-4 board of 25 cm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
The
R
R
spreader. The land size is same as 8-pin TSSOP.
µ
DS(on)1
DS(on)2
PA2503 has a thin surface mount package with a heat
µ
2. PW ≤ 10
3. Starting T
PA2503, which has a heat spreader, is N-channel
PART NUMBER
iss
µ
= 9.5 mΩ MAX. (V
= 15.1 mΩ MAX. (V
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
: 1200 pF TYP. (V
PA2503TM
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
µ
Note1
ch
s, Duty Cycle ≤ 1%
Note2
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
= 25°C, V
Note1
Note3
Note3
DS
GS
GS
DS
GS
= 0 V)
= 0 V)
= 10.0 V, I
= 10.0 V, V
DD
= 4.5 V, I
= 30 V, R
8PIN HWSON
PACKAGE
D
D
GS
= 8.0 A)
= 8.0 A)
A
2
G
= 0 V)
x 1.6 mm, PW ≤ 10 sec
= 25°C)
FOR SWITCHING
= 25 Ω, V
DATA SHEET
I
D(pulse)
V
I
V
D(DC)
T
E
T
P
I
DSS
GSS
AS
stg
AS
ch
T
GS
MOS FIELD EFFECT TRANSISTOR
= 20.0 → 0 V
−55 to +150
±20.0
±16.0
±64.0
30.0
16.0
25.6
0.75 ±0.15
150
2.7
PACKAGE DRAWING (Unit: mm)
mJ
1
2
3
4
°C
°C
W
V
V
A
A
A
5.8 ±0.1
6.4 ±0.1
4.15 ±0.2
8
7
6
5
EQUIVALENT CIRCUIT
µ
Gate
Gate
Protection
Diode
0.85 ±0.15
PA2503
1, 2, 3
4
5, 6, 7, 8: Drain
Source
Drain
: Source
: Gate
Body
Diode
0.10 S
2003

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upa2503tm Summary of contents

Page 1

N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION µ The PA2503, which has a heat spreader, is N-channel MOS Field Effect Transistor designed for power management applications of notebook computers. FEATURES µ • PA2503 has a thin surface mount package with a ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA 1000 R Limited ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 80 Pulsed 10 4 0.2 0.4 0 Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2.4 ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 8 Pulsed 100 T - Channel Temperature - °C ch SWITCHING CHARACTERISTICS ...

Page 6

EXAMPLE OF THE LAND PATTERN Please optimize the land pattern in consideration of density, appearance of solder fillets, common difference, etc in an actual design Data Sheet G16682EJ1V0DS µ PA2503 e1: 0.65 b2: ...

Page 7

The information in this document is current as of December, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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