upa2502tm Renesas Electronics Corporation., upa2502tm Datasheet - Page 3

• Manufacturer Part Number: upa2502tm
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
1000
0.01
100
0.1
120
100
10
80
60
40
20
1
0
0.1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
0
Single pulse
Mounted on FR-4 board of 25 cm
(at V
I
R
D(DC)
DS(on)
GS
V
25
T
Limited
= 10 V)
DS
A
- Ambient Temperature - °C
- Drain to Source Voltage - V
1000
100
50
0.1
10
I
1
1
D(pulse)
1 m
75
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
2
x 1.6 mm
10 m
10
125
A
= 25°C)
PW = 1 ms
150
10 ms
30 ms
10 s
100 m
Data Sheet G16681EJ1V0DS
100
175
PW - Pulse Width - s
Single pulse
Mounted on FR-4 board of 25 cm
1
2.5
1.5
0.5
3
2
1
0
10
0
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
25
T
A
- Ambient Temperature - °C
100
50
Mounted on FR-4 board of
25 cm
2
x 1.6 mm
75
2
x 1.6 mm, PW ≤ 10 sec
1000
100
125
µ
150
PA2502
175
3