upa2502tm Renesas Electronics Corporation., upa2502tm Datasheet - Page 2

• Manufacturer Part Number: upa2502tm
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
Note Pulsed: PW ≤ 350
TEST CIRCUIT 1 AVALANCHE CAPABILITY
V
TEST CIRCUIT 3 GATE CHARGE
2
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
= 20
PG.
→
0 V
CHARACTERISTICS
PG.
I
G
V
= 2 mA
50
DD
R
D.U.T.
Ω
G
I
D
= 25
50
I
AS
D.U.T.
Ω
µ
Ω
s, Duty Cycle ≤ 2%
Note
Note
BV
DSS
Starting T
R
V
Note
L
DD
V
DS
L
V
DD
ch
SYMBOL
R
R
V
V
| y
t
t
I
DS(on)1
DS(on)2
C
Q
Q
I
C
C
GS(off)
d(on)
d(off)
Q
F(S-D)
Q
DSS
GSS
t
t
t
oss
GD
A
fs
iss
rss
GS
rr
r
f
G
rr
|
= 25°C)
Data Sheet G16681EJ1V0DS
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
R
V
V
I
I
I
di/dt = 100 A/
V
0
D
F
F
GS
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS
G
DD
GS
= 13.0 A, V
= 13.0 A, V
τ = 1 s
Duty Cycle
= 13.0 A
= 10 Ω
= 30.0 V, V
= 10.0 V, I
= 10.0 V, I
= 10.0 V
= ±20.0 V, V
= 10.0 V, I
= 4.5 V, I
= 0 V
= 15.0 V, I
= 10.0 V
= 15.0 V
= 5.0 V
TEST CIRCUIT 2 SWITCHING TIME
PG.
µ
TEST CONDITIONS
τ
≤
D
GS
GS
µ
D
D
1%
D
D
s
= 7.0 A
GS
= 0 V
= 0 V
= 1.0 mA
= 7.0 A
= 7.0 A
= 7.0 A
DS
R
= 0 V
G
D.U.T.
= 0 V
R
V
DD
L
MIN.
V
Wave Form
V
Wave Form
1.50
GS
DS
5
V
V
V
GS
DS
0
0
DS
TYP.
13.1
0.84
760
300
100
9.3
8.5
2.8
3.5
14
32
27
24
10%
3
4
t
d(on)
90%
t
on
10% 10%
t
±10.0
MAX.
r
2.50
12.0
18.0
1.0
V
GS
µ
t
d(off)
PA2502
t
off
90%
UNIT
mΩ
mΩ
µ
µ
nC
nC
nC
nC
pF
pF
pF
90%
ns
ns
ns
ns
ns
t
V
S
V
f
A
A