upa2794agr Renesas Electronics Corporation., upa2794agr Datasheet

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upa2794agr

Manufacturer Part Number
upa2794agr
Description
Switching N- And P-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number:
upa2794agr-E1-AZ
Manufacturer:
NEC
Quantity:
20 000
Document No. G19922EJ1V0DS00 (1st edition)
Date Published August 2009 NS
Printed in Japan
DESCRIPTION
Transistors designed for Motor Drive application.
• Low input capacitance
• Built-in gate protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
Note Pb-free (This product does not contain Pb in external electrode and other parts.)
EQUIVALENT CIRCUITS
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
FEATURES
• Low on-state resistance
Gate
Gate
Protection
Diode
N-channel C
P-channel C
The
N-channel R
P-channel R
μ
μ
PA2794AGR-E2-AT
PA2794AGR-E1-AT
μ
N-channel
PART NUMBER
PA2794AGR is N- and P-channel MOS Field Effect
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Source
Drain
R
R
DS(on)1
DS(on)2
DS(on)1
DS(on)2
iss
iss
= 2200 pF TYP.
= 2200 pF TYP.
Body
Diode
= 25 mΩ MAX. (V
= 33 mΩ MAX. (V
= 43 mΩ MAX. (V
= 54 mΩ MAX. (V
Note
Note
N- AND P-CHANNEL POWER MOS FET
LEAD PLATING
Gate
Gate
Protection
Diode
Pure Sn
GS
GS
GS
GS
= −10 V, I
= −4.5 V, I
= 10 V, I
= 4.5 V, I
P-channel
DATA SHEET
Source
Drain
SWITCHING
D
D
D
D
= 2.8 A)
= 2.8 A)
= −2.8 A)
= −2.8 A)
Body
Diode
Tape 2500 p/reel
MOS FIELD EFFECT TRANSISTOR
PACKING
μ
8
1
PACKAGE DRAWING (Unit: mm)
PA2794AGR
5.37 MAX.
0.40
1.27
+0.10
–0.05
0.78 MAX.
5
4
Power SOP8
PACKAGE
0.12 M
N-channel
P-channel
0.5 ±0.2
6.0 ±0.3
1
2
7, 8: Drain 1
3
4
5, 6: Drain 2
4.4
: Source 1
: Gate 1
: Source 2
: Gate 2
0.8
2009
0.10

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upa2794agr Summary of contents

Page 1

N- AND P-CHANNEL POWER MOS FET DESCRIPTION μ The PA2794AGR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. FEATURES • Low on-state resistance N-channel mΩ MAX. (V DS(on mΩ ...

Page 2

ABSOLUTE MAXIMUM RATINGS (T PARAMETER Drain to Source Voltage ( Gate to Source Voltage ( Drain Current (DC) I Note1 Drain Current (pulse) I Note2 Total Power Dissipation (1 unit) ...

Page 3

ELECTRICAL CHARACTERISTICS (T N-channel CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current I Gate Leakage Current I Gate to Source Cut-off Voltage V Note Forward Transfer Admittance | y Note Drain to Source On-state Resistance R R Input Capacitance C Output ...

Page 4

P-channel CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current I Gate Leakage Current I Gate to Source Cut-off Voltage V Note Forward Transfer Admittance | y Note Drain to Source On-state Resistance R R Input Capacitance C Output Capacitance C Reverse ...

Page 5

TYPICAL CHARACTERISTICS (T A (1) N-channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 140 160 T - Ambient Temperature - °C A FORWARD BIAS SAFE ...

Page 6

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4 0 Drain to Source Voltage - V DS GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL ...

Page 7

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 2 Pulsed 0 - 100 - Channel Temperature - ° SWITCHING CHARACTERISTICS 1000 ...

Page 8

P-channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 140 160 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA -100 I ...

Page 9

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -50 -40 − −4 -20 -10 Pulsed -0 -0 -0 Drain to Source Voltage - V DS GATE TO SOURCE CUT-OFF VOLTAGE vs. ...

Page 10

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE −4 − Pulsed 0 - 100 - Channel Temperature - ° SWITCHING CHARACTERISTICS 1000 t ...

Page 11

TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Reel side MARKING INFORMATION Pb-free plating marking RECOMMENDED SOLDERING CONDITIONS μ The PA2794AGR should be soldered and mounted under the following recommended conditions. ...

Page 12

The information in this document is current as of August, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of ...

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