upa2794 Renesas Electronics Corporation., upa2794 Datasheet
upa2794
Manufacturer Part Number
upa2794
Description
Switching N- And P-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2794.pdf
(12 pages)
Available stocks
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Part Number
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Quantity
Price
Part Number:
upa2794AGR-E1-AZ
Manufacturer:
NEC
Quantity:
20 000
Part Number:
upa2794GR
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
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Part Number:
upa2794GR-E1
Manufacturer:
RENESAS
Quantity:
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Part Number:
upa2794GR-E1-AZ
Manufacturer:
NEC
Quantity:
20 000
Document No. G18594EJ1V0DS00 (1st edition)
Date Published January 2007 NS CP(K)
Printed in Japan
DESCRIPTION
Transistors designed for Motor Drive application.
• Low input capacitance
• Built-in gate protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
Note Pb-free (This product does not contain Pb in external electrode).
EQUIVALENT CIRCUITS
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
FEATURES
• Low on-state resistance
Gate
Gate
Protection
Diode
N-channel C
P-channel C
The
N-channel R
P-channel R
μ
μ
PA2794GR-E1-AZ
PA2794GR-E2-AZ
μ
N-channel
PART NUMBER
PA2794GR is N- and P-channel MOS Field Effect
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Source
Drain
R
R
DS(on)1
DS(on)2
DS(on)1
DS(on)2
iss
iss
= 2200 pF TYP.
= 2200 pF TYP.
Body
Diode
= 25 mΩ MAX. (V
= 33 mΩ MAX. (V
= 43 mΩ MAX. (V
= 54 mΩ MAX. (V
Note
Note
N- AND P-CHANNEL POWER MOS FET
LEAD PLATING
Gate
Gate
Protection
Diode
Sn-Bi
GS
GS
GS
GS
= −10 V, I
= −4.5 V, I
= 10 V, I
= 4.5 V, I
P-channel
DATA SHEET
Source
Drain
SWITCHING
D
D
D
D
= 2.8 A)
= 2.8 A)
= −2.8 A)
= −2.8 A)
Body
Diode
Tape 2500 p/reel
MOS FIELD EFFECT TRANSISTOR
PACKING
8
1
PACKAGE DRAWING (Unit: mm)
5.37 MAX.
μ
0.40
1.27
PA2794GR
+0.10
–0.05
0.78 MAX.
5
4
Power SOP8
PACKAGE
0.12 M
N-channel
P-channel
0.5 ±0.2
6.0 ±0.3
1
2
7, 8: Drain 1
3
4
5, 6: Drain 2
4.4
: Source 1
: Gate 1
: Source 2
: Gate 2
2007
0.8
0.10
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