upa2794 Renesas Electronics Corporation., upa2794 Datasheet - Page 4

• Manufacturer Part Number: upa2794
• Description: Switching N- And P-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

P-channel
Note Pulsed
4
TEST CIRCUIT 1 AVALANCHE CAPABILITY
V
TEST CIRCUIT 3 GATE CHARGE
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
PG.
= −20 → 0 V
−
I
CHARACTERISTICS
PG.
G
V
= −2 mA
50 Ω
DD
I
D
R
D.U.T.
G
= 25 Ω
50 Ω
I
AS
D.U.T.
BV
Note
Note
DSS
Starting T
V
R
V
DS
L
DD
Note
L
V
ch
DD
I
I
V
| y
R
R
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
SYMBOL
DSS
GSS
d(on)
r
d(off)
f
rr
GS(off)
DS(on)1
DS(on)2
iss
oss
rss
F(S-D)
G
GS
GD
rr
fs
|
Data Sheet G18594EJ1V0DS
V
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
I
V
V
I
I
di/dt = −50 A/
V
D
F
F
0
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS
G
DD
GS
GS
= 5.5 A, V
= −5.5 A, V
= −5.5 A,
τ = 1 s
Duty Cycle ≤ 1%
PG.
= 0 Ω
(−)
= −60 V, V
= m20 V, V
= −10 V, I
= −10 V, I
= −10 V, I
= −4.5 V, I
= −10 V,
= 0 V,
= −30 V, I
= −10 V,
= −48 V,
= −10 V
TEST CIRCUIT 2 SWITCHING TIME
μ
τ
TEST CONDITIONS
GS
GS
μ
D
D
D
D
R
D
GS
DS
= 0 V
s
= −1 mA
= −2.8 A
G
= −2.8 A
= −2.8 A,
= 0 V,
= −2.8 A
= 0 V
= 0 V
D.U.T.
R
V
DD
L
V
Wave Form
V
Wave Form
GS
DS
MIN.
−1.0
5
V
V
V
GS
DS
DS
0
0
(−)
(−)
2200
TYP.
−1.7
0.83
10%
t
270
200
150
4.3
90%
d(on)
10
33
36
10
22
23
45
13
46
29
μ
t
on
PA2794GR
10%
MAX.
t
−2.5
−10
m10
r
1.5
43
54
V
GS
t
10%
d(off)
t
UNIT
off
mΩ
mΩ
90%
μ
μ
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
A
A
90%
t
f