NBSG16 ON Semiconductor, NBSG16 Datasheet - Page 6

• Manufacturer Part Number: NBSG16
• Manufacturer: ON Semiconductor

NOTE: SiGe circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
13. Input and output parameters vary 1:1 with V
14. All loading with 50 W to V
15. V
16. V
17. V
*Typicals used for testing purposes.
18. Measured using a 400 mV source, 50% duty cycle clock source. All loading with 50 W to V
19. See Figure 6. t
20. V
Table 7. DC CHARACTERISTICS, NECL OR RSNECL INPUT WITH NECL OUTPUT
V
Symbol
Table 8. AC CHARACTERISTICS for FCBGA-16
V
Symbol
I
VOH
V
V
V
V
V
V
R
I
I
f
t
t
t
t
V
t
t
EE
IH
IL
max
PLH
PHL
SKEW
JITTER
r
f
CC
CC
OUTPP
IH
IL
BB
IHCMR
MM
INPP
TIN
input signal.
THR
IHCMR
MM
INPP(max)
,
= 0 V; V
= 0 V; V
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
typical = |V
is the voltage applied to the complementary input, typically V
min varies 1:1 with V
Maximum Frequency
(See Figure 4. F
Propagation Delay to
Output Differential
Duty Cycle Skew (Note 19)
RMS Random Clock Jitter
Peak-to-Peak Data Dependent Jitter
Input Voltage Swing/Sensitivity
(Differential Configuration) (Note 20)
Output Rise/Fall Times @ 1 GHz
(20% - 80%)
Negative Power Supply Current
Output HIGH Voltage (Note 14)
Output Voltage Amplitude
Input HIGH Voltage
(Single-Ended) (Note 15)
Input LOW Voltage
(Single-Ended) (Note 15)
NECL Output Voltage Reference
Input HIGH Voltage Common
Mode Range (Note 16)
(Differential Configuration)
CMOS Output Voltage Reference
(Note 17)
Internal Input Termination Resis-
tor
Input HIGH Current (@ V
Input LOW Current (@ V
EE
EE
cannot exceed V
= -3.465 V to -2.375 V (Note 13)
= -3.465 V to -2.375 V or V
skew
CC
Characteristic
= |t
- V
Characteristic
PLH
EE
max
CC
|/2 + V
- t
CC
EE
-2.0 volts.
/JITTER) (Note 18)
PHL
, V
- V
EE
| for a nominal 50% differential clock input waveform.
IHCMR
IL
IH
EE
)
= V
)
MMT
f
max varies 1:1 with V
f
in
in
CC
< 10 Gb/s
< 10 GHz
CC
= 2.375 V to 3.465 V; V
V
75 mV
-1050
-1420
V
-150
THR
.
Min
350
V
MMT
17
45
Q, Q
EE
V
EE
+
+1.2
-40 C
-1360
V
V
V
http://onsemi.com
-970
10.7
Typ
410
1.0*
1.4*
Min
CC
CC
MMT
23
50
30
25
90
75
30
-
-
CC
NBSG16
-40 C
. The V
V
75 mV
-1300
TBD
V
+ 150
Typ
-925
110
0.2
Max
V
THR
12
45
525
100
0.0
6
MMT
3
29
55
50
BB
CC
EE
or V
-
IHCMR
= 0 V
2600
Max
130
15
75
V
1
MM
75 mV
-1420
V
-975
-150
THR
Min
350
V
MMT
17
45
EE
.
range is referenced to the most positive side of the differential
V
EE
+
10.7
Min
100
+1.2
75
20
-1360
V
V
V
25 C
-935
Typ
410
1.0*
1.4*
CC
CC
MMT
23
50
30
25
25 C
CC
-
-
TBD
Typ
120
0.2
12
40
3
- 2.0 V. Input edge rates 40 ps (20% - 80%).
V
75 mV
-1300
V
+ 150
-900
Max
V
THR
525
100
0.0
MMT
29
55
50
CC
2600
Max
140
15
65
-
1
V
75 mV
-1420
V
-950
-150
THR
Min
350
V
MMT
17
45
EE
V
10.7
Min
105
75
20
EE
+
+1.2
-1360
V
V
V
85 C
-910
Typ
410
1.0*
1.4*
CC
CC
MMT
23
50
30
25
85 C
TBD
Typ
125
0.2
12
40
3
-
-
V
75 mV
-1300
V
+ 150
-875
Max
V
THR
525
100
2600
0.0
29
MMT
55
50
Max
145
CC
15
65
1
-
Unit
GHz
Unit
mA
mV
mV
mV
mV
mV
mA
mA
ps
ps
ps
ps
W
V
V
V