k6f2008v2e Samsung Semiconductor, Inc., k6f2008v2e Datasheet - Page 4

• Manufacturer Part Number: k6f2008v2e
• Description: 256kx8 Bit Super Low Power And Low Voltage Full Cmos Static Ram
• Manufacturer: Samsung Semiconductor, Inc.

K6F2008V2E Family
RECOMMENDED DC OPERATING CONDITIONS
Note:
1. Industrial Product: T
2. Overshoot: Vcc+2.0V in case of pulse width 20ns.
3. Undershoot: -2.0V in case of pulse width 20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
1. Typical value are measured at V
Supply voltage
Ground
Input high voltage
Input low voltage
Input capacitance
Input/Output capacitance
Input leakage current
Output leakage current
Average operating current
Output low voltage
Output high voltage
Standby Current(CMOS)
Item
Item
Item
A
=-40 to 85 C, unless otherwise specified.
1)
(f=1MHz, T
CC
=3.3V, T
Symbol
A
I
I
V
I
V
I
=25 C)
CC1
CC2
SB1
I
LO
OH
LI
OL
Symbol
A
=25 C, and not 100% tested.
C
C
IN
IO
V
CS
Cycle time=1 s, 100% duty, I
CS
Cycle time=Min, 100% duty, I
CS
I
I
Other inputs=Vss to Vcc
OL
OH
1) CS
2) 0V CS
IN
=2.1mA
Symbol
1
2
2
=Vss to Vcc
=-1.0mA
=V
=V
Vcc
Vss
V
V
V
1
CC
IH
IH
IH
IL
, V
Vcc-0.2V, CS2 Vcc-0.2V(CS
or CS
-0.2V, V
2
IN
0.2V CS
=V
2
IL
=V
Test Condition
IN
or V
IL
0.2V or V
Test Conditions
or OE=V
V
2
V
-0.2
IH
Min
controlled)
3.0
2.2
IN
IO
0
4
=0V
=0V
3)
1)
IH
IO
IO
IN
=0mA, CS
=0mA, CS
or WE=V
V
CC
-0.2V
1
controlled) or
Typ.
IL,
3.3
1
1
0
-
-
=V
V
0.2V,
IO
IL
=Vss to Vcc
,
Min
-
-
Vcc+0.2
Max
3.6
0.6
0
Min
2.4
CMOS SRAM
-1
-1
-
-
-
-
Max
2)
10
8
Typ
0.5
-
-
-
-
-
-
1)
Revision 1.1
Max
0.4
35
10
Unit
1
1
3
-
Unit
V
V
V
V
May 2003
pF
pF
Unit
mA
mA
V
V
A
A
A