k6f2016u4d Samsung Semiconductor, Inc., k6f2016u4d Datasheet - Page 8
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k6f2016u4d
Manufacturer Part Number
k6f2016u4d
Description
128k X16 Bit Super Low Power And Low Voltage Full Cmos Static Ram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K6F2016U4D.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
K6F2016U4D
Manufacturer:
SAMSUNG
Quantity:
11 100
Company:
Part Number:
k6f2016u4d-FF70
Manufacturer:
SAMSUNG
Quantity:
11 105
DATA RETENTION WAVE FORM
K6F2016U4D Family
CS or LB/UB controlled
TIMING WAVEFORM OF WRITE CYCLE(3)
Address
CS
UB, LB
WE
Data in
Data out
NOTES (WRITE CYCLE)
1. A wri
2. t
3.
4. t
V
2.7V
2.2V
V
CS or LB/UB
GND
CC
DR
t
or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest transi-
tion when CS goes high and WE goes high. The t
CW
AS
WR
is measured from the address valid to the beginning of write.
is measured from the CS going low to end of write.
is measured from the end or write to the address change. t
t
e occurs during the overlap(t
WP
) of low CS and low WE. A write begins when CS goes low and WE goes low with asserting UB
High-Z
t
SDR
t
AS(3)
WP
(UB, LB Controlled)
is measured from the beginning of write to the end of write.
CS V
WR
Data Retention Mode
CC
- 8 -
applied in case a write ends as CS or WE going high.
-0.2V
t
t
AW
CW(2)
t
WC
t
BW
t
or LB=UB Vcc-0.2V
WP(1)
t
DW
Data Valid
t
WR(4)
t
DH
High-Z
t
RDR
CMOS SRAM
Revision 1.0
May 2000