k6f2016u4d Samsung Semiconductor, Inc., k6f2016u4d Datasheet - Page 2

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k6f2016u4d

Manufacturer Part Number
k6f2016u4d
Description
128k X16 Bit Super Low Power And Low Voltage Full Cmos Static Ram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
K6F2016U4D
Manufacturer:
SAMSUNG
Quantity:
11 100
Part Number:
k6f2016u4d-FF70
Manufacturer:
SAMSUNG
Quantity:
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PIN DESCRIPTION
K6F2016U4D Family
128K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
I/O
Process Technology: Full CMOS
Organization: 128K x16 bit
Power Supply Voltage: 2.7~3.3V
Low Data Retention Voltage: 1.5V(Min)
Three state output status and TTL Compatible
Package Type: 48-FBGA-6.00x7.00
Product Family
A
K6F2016U4D-F
Name
G
C
D
H
A
B
E
F
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice
0
1
WE
CS
OE
~A
~I/O
16
16
I/O10
I/O15
I/O16
DNU
I/O9
Vss
Vcc
LB
1
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
Data Inputs/Outputs
48-FBGA: Top View (Ball Down)
Function
I/O11
I/O12
I/O13
I/O14
DNU
OE
UB
A8
2
Operating Temperature
Industrial(-40~85 C)
DNU
DNU
A14
A12
A0
A3
A5
A9
3
A16
A15
A13
A10
A1
A4
A6
A7
4
Name
DNU
Vcc
Vss
UB
LB
I/O2
I/O4
I/O5
I/O6
WE
A11
A2
CS
5
Power
Ground
Upper Byte(I/O
Lower Byte(I/O
Do Not Use
Vcc Range
DNU
DNU
I/O1
I/O3
I/O7
I/O8
2.7~3.3V
Vcc
Vss
6
Function
9
1
~
~
16
8
)
55
)
Speed
- 2 -
1)
FUNCTIONAL BLOCK DIAGRAM
GENERAL DESCRIPTION
advanced full CMOS process technology. The families support
industrial temperature range and 48 ball Chip Scale Package
for user flexibility of system design. The families also support
low data retention voltage for battery back-up operation with
low data retention current.
/70ns
I/O
The K6F2016U4D families are fabricated by SAMSUNG s
9
~I/O
I/O
Row
Addresses
16
1
~I/O
WE
OE
CS
UB
LB
8
(I
Standby
SB1
0.5 A
Control Logic
Power Dissipation
, Typ.)
Clk gen.
Data
cont
Data
cont
Data
cont
Row
select
(I
Operating
CC1
4mA
, Max)
CMOS SRAM
Precharge circuit.
Column Addresses
Memory array
1024 rows
128
Column select
48-FBGA-6.00x7.00
I/O Circuit
16 columns
PKG Type
Revision 1.0
May 2000
Vcc
Vss
.

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