k6r4004v1d Samsung Semiconductor, Inc., k6r4004v1d Datasheet - Page 4

• Manufacturer Part Number: k6r4004v1d
• Description: 1mx4 Bit High Speed Static Ram 3.3v Operating . Operated At Commercial And Industrial Temperature Ranges
• Manufacturer: Samsung Semiconductor, Inc.

K6R4004V1D
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
RECOMMENDED DC OPERATING CONDITIONS*
*
** V
*** V
DC AND OPERATING CHARACTERISTICS*
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*
* Capacitance is sampled and not 100% tested.
Voltage on Any Pin Relative to V
Voltage on V
Power Dissipation
Storage Temperature
Operating Temperature
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Input/Output Capacitance
Input Capacitance
The above parameters are also guaranteed at industrial temperature range.
IL
IH
(Min) = -2.0V a.c(Pulse Width ≤ 8ns) for I ≤ 20mA.
(Max) = V
Parameter
CC
CC
Parameter
+ 2.0V a.c (Pulse Width ≤ 8ns) for I ≤ 20mA.
Supply Relative to V
Item
Parameter
(T
A
=25°C, f=1.0MHz)
Symbol
Commercial
Industrial
V
I
V
SS
I
I
I
SB1
I
LO
CC
SB
OH
LI
OL
SS
V
CS=V
V
Min. Cycle, 100% Duty
CS=V
Min. Cycle, CS=V
f=0MHz, CS≥V
V
I
I
OL
OH
IN
OUT
IN
=8mA
=-4mA
=V
≥V
=V
Symbol
SS
IH
IL,
CC
V
V
SS
Symbol
or OE=V
V
V
V
-0.2V or V
to V
CC
SS
IH
IL
IN
C
C
to V
=V
I/O
IN
CC
IH
CC
CC
or V
IH
-0.2V,
IH
IN
or WE=V
(T
≤0.2V
- 4 -
IL,
V
Test Conditions
Symbol
A
IN
I
=0 to 70°C, Vcc=3.3±0.3V, unless otherwise specified)
OUT
T
V
, V
P
T
T
-0.3*
STG
Test Conditions
Min
CC
3.0
2.0
A
A
D
0
OUT
=0mA
(T
IL
V
V
A
I/O
=0 to 70°C)
IN
=0V
=0V
Com.
Ind.
Typ
3.3
0
-
-
-0.5 to 4.6
-0.5 to 4.6
-65 to 150
-40 to 85
Rating
0 to 70
1.0
TYP
-
-
10ns
10ns
8ns
8ns
V
CC
PRELIMINARY
Max
3.6
0.8
+0.3**
0
CMOS SRAM
Min
2.4
Max
-2
-2
-
-
-
-
-
-
-
8
6
Max
Unit
0.4
80
65
90
75
20
°C
°C
°C
W
2
2
5
-
V
V
July 2004
Unit
V
V
V
V
Unit
pF
pF
Rev 2.0
Unit
mA
mA
µA
µA
V
V