mtsf3n03hdr2 Freescale Semiconductor, Inc, mtsf3n03hdr2 Datasheet - Page 3
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mtsf3n03hdr2
Manufacturer Part Number
mtsf3n03hdr2
Description
Tmos Single N-channel Field Effect Transistor
Manufacturer
Freescale Semiconductor, Inc
Datasheet
1.MTSF3N03HDR2.pdf
(12 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MTSF3N03HDR2
Manufacturer:
PHILIPS
Quantity:
450
Part Number:
MTSF3N03HDR2
Manufacturer:
ON/安森美
Quantity:
20 000
(1) Pulse Test: Pulse Width
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (2)
SOURCE–DRAIN DIODE CHARACTERISTICS
Motorola TMOS Power MOSFET Transistor Device Data
Drain–to–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current (V GS =
Gate Threshold Voltage
Static Drain–to–Source On–Resistance
Forward Transconductance (V DS = 10 Vdc, I D = 1.9 Adc)
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
Forward On–Voltage
Reverse Recovery Time
Reverse Recovery Storage Charge
(V GS = 0 Vdc, I D = 250 µAdc)
Temperature Coefficient (Positive)
(V DS = 24 Vdc, V GS = 0 Vdc)
(V DS = 24 Vdc, V GS = 0 Vdc, T J = 125 C)
(V DS = V GS , I D = 250 µAdc)
Threshold Temperature Coefficient (Negative)
(V GS = 10 Vdc, I D = 3.8 Adc)
(V GS = 4.5 Vdc, I D = 1.9 Adc)
C pk =
300 µs, Duty Cycle
Characteristic
Max limit – Typ
(I S = 3.7 Adc, V GS = 0 Vdc, T J = 125 C)
3 x SIGMA
20 Vdc, V DS = 0)
(T A = 25 C unless otherwise noted)
(I S = 3.7 Adc, V GS = 0 Vdc) (1)
V GS = 4.5 Vdc, R G = 6 Ω) (1)
V GS = 10 Vdc, R G = 6 Ω) (1)
(V
(V DS = 25 Vdc, V GS = 0 Vdc,
(V
(V DD = 15 Vdc, I D = 1.9 Adc,
( DD
(V
(V DS = 15 Vdc, I D = 3.7 Adc,
( DS
(V
(V DS = 24 Vdc, I D = 3.7 Adc,
( DS
(I
(I S = 3.7 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/µs) (1)
dI S /dt = 100 A/µs) (1)
3 7 Adc V
V GS = 10 Vdc)
2%.
25 Vdc V
15 Vd
24 Vd
15 Vd
f = 1.0 MHz)
f = 1.0 MHz)
(Cpk
(Cpk
(Cpk
, D
, D
, D
I
I
I
2.0)
2.0)
2.0)
3 7 Ad
3 7 Ad
1 9 Ad
0 Vdc
0 Vdc
(1) (3)
(3)
(3)
,
,
,
V (BR)DSS
R DS(on)
Symbol
V GS(th)
t d(on)
t d(off)
t d(on)
t d(off)
I GSS
I DSS
C oss
Q RR
C rss
C iss
V SD
g FS
Q T
Q 1
Q 2
Q 3
t rr
t a
t b
t r
t f
t r
t f
Min
1.0
2.0
30
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0.028
18.5
0.82
Typ
420
190
1.5
4.5
7.0
7.0
1.4
5.5
7.1
0.7
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27
—
—
—
35
45
—
65
19
32
36
11
29
23
28
14
14
MTSF3N03HD
Max
100
1.0
1.0
25
40
60
26
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mV/ C
mV/ C
Mhos
µAdc
nAdc
Unit
Vdc
Vdc
Vdc
mΩ
nC
µC
pF
ns
ns
ns
3