upa1970 Renesas Electronics Corporation., upa1970 Datasheet - Page 5

• Manufacturer Part Number: upa1970
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

160
120
1000
80
40
160
120
100
0
80
40
10
0.01
0
0.01
0.1
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
V
f = 1.0 MH z
V
Pulsed
V
Pulsed
GS
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
G S
GS
V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
DS
= 0 V
= 2.5 V
= 4.5 V
- Drain to Source Voltage - V
I
I
25 C
25 C
D
D
T
0.1
- Drain Current - A
- Drain Current - A
A
0.1
1
= 125 C
25 C
25 C
75 C
T
A
= 125 C
75 C
1
10
1
C
C
C
rss
iss
oss
Data Sheet G15934EJ1V0DS
10
100
10
160
120
80
40
1000
100
0
0.01
10
0.1
0.01
10
1
0.1
0.4
V
Pulsed
V
V
R
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GS
V
Pulsed
DD
GS
G
t
t
f
d(on)
GS
SWITCHING CHARACTERISTICS
= 4.0 V
t
= 10
d(off)
= 10 V
= 4.0 V
V
= 0 V
F(S-D)
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
0.6
I
0.1
D
t
- Source to Drain Voltage - V
r
25 C
25 C
T
- Drain Current - A
I
A
D
= 125 C
- Drain Current - A
75 C
1
0.8
1
PA1970
1
10
10
1.2
5