upa1970 Renesas Electronics Corporation., upa1970 Datasheet - Page 4

• Manufacturer Part Number: upa1970
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
10
1.2
1.1
0.9
0.8
0.7
0.6
160
120
8
6
4
2
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
40
1
0
-50
0
-50
Pulsed
I
Pulsed
D
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0.1
= 1.0 A
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
T
T
DS
ch
ch
0
- Drain to Source Voltage - V
- Channel Temperature - C
- Channel Temperature - C
0
0.2
V
GS
= 2.5 V
V
2.5 V
0.3
GS
50
50
= 4.5 V
0.4
V
I
D
100
4.5 V
4.0 V
DS
100
= 1.0 mA
0.5
= 10 V
4.0 V
0.6
Data Sheet G15934EJ1V0DS
150
150
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.00001
0.01
0.1
0.0001
10
160
120
0.001
1
80
40
0.01
0.01
0
0.1
10
FORWARD TRANSFER CHARACTERISTICS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
0
1
V
Pulsed
DS
0
I
Pulsed
D
V
P uls ed
= 10 V
= 1.0 A
V
D S
V
2
GS
GS
= 10 V
- Gate to Source Voltage - V
I
0.5
D
- Gate to Source Voltage - V
0.1
- Drain Current - A
4
1
6
T
A
= 125 C
1
1.5
8
75 C
25 C
25 C
T
PA1970
A
= 1 25 C
10
2
75 C
25 C
25 C
10
12
2.5