upa1980 Renesas Electronics Corporation., upa1980 Datasheet - Page 3

• Manufacturer Part Number: upa1980
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

MOS FET ELECTRICAL CHARACTERISTICS (T
Note Pulsed: PW
SCHOTTKY BARRIER DIODE ELECTRICAL CHARACTERISTICS (T
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Forward Voltage
Reverse Current
0
TEST CIRCUIT 1 SWITCHING TIME
GS( )
Duty Cycle
PG.
= 1 s
CHARACTERISTICS
CHARACTERISTICS
R
1%
G
D.U.T.
Note
350 s, Duty Cycle
Note
R
V
L
DD
Note
V
Wave Form
V
Wave Form
GS
DS
SYMBOL
SYMBOL
R
R
R
V
V
| y
2%
t
I
C
t
Q
Q
I
DS(on)1
DS(on)2
DS(on)3
C
C
GS(off)
V
V
d(on)
d(off)
Q
F(S-D)
DSS
GSS
V
I
t
t
V
oss
iss
rss
GS
GD
R
fs
r
f
GS( )
DS( )
G
F
0
DS
0
|
10%
t
Data Sheet G16550EJ1V0DS
d(on)
90%
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
R
V
V
I
I
I
V
D
F
F
t
on
DS
GS
DS
DS
GS
GS
GS
DS
GS
DD
GS
G
DD
GS
R
= 2.0 A
= 2.0 A, V
= 0.5 A
= 40.0 V
= 10
10% 10%
t
= 20.0 V, V
=
= 10.0 V, I
= 10.0 V, I
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
= 10.0 V
= 0 V
= 10.0 V, I
= 4.0 V
= 16.0 V
= 4.0 V
r
m
A
V
8.0 V, V
t
GS
TEST CONDITIONS
TEST CONDITIONS
d(off)
= 25°C)
GS
t
off
90%
D
D
D
= 0 V
DS
D
D
D
90%
= 1.0 A
= 1.0 A
= 0.5 A
GS
t
f
= 1.0 mA
= 1.0 A
= 1.0 A
= 0 V
= 0 V
TEST CIRCUIT 2 GATE CHARGE
A
PG.
= 25°C)
MIN.
MIN.
0.45
1.0
I
G
= 2 mA
50
TYP.
TYP.
0.90
0.44
116
142
170
272
0.75
4.1
2.3
0.6
0.6
33
60
30
9
5
9
3
D.U.T.
MAX.
MAX.
0.51
m
135
183
284
1.50
20
10
10
PA1980
UNIT
UNIT
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
S
V
V
A
A
A
R
V
DD
L
3