upa1980 Renesas Electronics Corporation., upa1980 Datasheet

upa1980

Manufacturer Part Number

upa1980

Description

P-channel Mos Field Effect Transistor For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1980.pdf (8 pages)

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Part Number:

upa1980TE-T1

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Bonase Electronics (HK) Co., Limited

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Document No. G16550EJ1V0DS00 (1st edition)

Date Published February 2003 NS CP(K)

Printed in Japan

ORDERING INFORMATION

Marking: TW

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with

DESCRIPTION

directly by a 1.8 V power source.

on-state resistance and excellent switching characteristics,

and a low leakage Schottky barrier diode, and is suitable for

applications such as DC/DC converter of portable machine

and so on.

FEATURES

The

This device incorporates a MOS FET, which features a low

1.8 V drive available (MOS FET)

Low on-state resistance (MOS FET)

Low reverse current (Schottky barrier diode)

DS(on)1

DS(on)2

DS(on)3

= 20 A MAX. (V

PART NUMBER

PA1980 is a switching device, which can be driven

= 135 m

= 183 m

= 284 m

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

caution for electrostatic discharge.

PA1980TE

ESD

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE

100 V TYP. (C = 200 pF, R = 0

MAX. (V

= 40 V)

= 4.5 V, I

= 2.5 V, I

= 1.8 V, I

SC-95 (Mini Mold Thin Type)

MOS FET WITH SCHOTTKY BARRIER DIODE

PACKAGE

= 1.0 A)

= 0.5 A)

FOR SWITCHING

DATA SHEET

, Single pulse)

0.32

+0.1

–0.05

PIN CONNECTION (Top View)

PACKAGE DRAWING (Unit: mm)

1: Anode

2: Source

3: Gate

0.95

2.9 ±0.2

1.9

0.95

4: Drain

5: N/C

6: Cathode

PA1980

0.9 to 1.1

0.65

0.16

0 to 0.1

+0.1

–0.06

2003

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upa1980 Summary of contents

Page 1

P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE DESCRIPTION The PA1980 is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching ...

Page 2

MOS FET ABSOLUTE MAXIMUM RATINGS (T Drain to Source Voltage ( Gate to Source Voltage ( Drain Current (DC) Note1 Drain Current (pulse) Note2 Total Power Dissipation Channel Temperature Storage Temperature Notes ...

Page 3

MOS FET ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Note Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time ...

Page 4

MOS FET TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA - 1 ...

Page 5

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 8 Pulsed V = –4 –2 –1 0.2 - 0.4 - 0 Drain ...

Page 6

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 300 V = –1 Pulsed T 250 200 150 100 50 - 0. Drain Current - A D DRAIN TO SOURCE ON-STATE RESISTANCE ...

Page 7

SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 1 0.1 0.01 0.6 0 Source to Drain Voltage - V F(S-D) SCHOTTKY BARRIER DIODE TYPICAL CHARACTERISTICS (T FORWARD CURRENT vs. FORWARD ...

Page 8

The information in this document is current as of February, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date ...

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