upa1952 Renesas Electronics Corporation., upa1952 Datasheet - Page 5

• Manufacturer Part Number: upa1952
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

1000
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
300
250
200
150
100
300
250
200
150
100
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
50
10
- 0.01
- 0.01
- 0.1
V
Pulsed
V
Pulsed
V
f = 1.0 MHz
GS
GS
GS
T
A
= 1.8 V
V
= 4.5 V
= 0 V
= 125°C
DS
75°C
25°C
25°C
- Drain to Source Voltage - V
I
I
D
D
- 0.1
- 0.1
- 1
- Drain Current - A
- Drain Current - A
T
A
- 10
- 1
- 1
= 125°C
25°C
75°C
25°C
C
C
C
iss
rss
oss
Data Sheet G15933EJ1V0DS
- 100
- 10
- 10
1000
0.01
300
250
200
150
100
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
10
10
1
- 0.01
- 0.1
0.6
V
Pulsed
Pulsed
GS
t
t
d(off)
d(on)
V
SWITCHING CHARACTERISTICS
F(S-D)
= 2.5 V
t
f
0.8
- Source to Drain Voltage - V
I
I
D
D
- 0.1
V
- Drain Current - A
- Drain Current - A
GS
t
r
= 0 V
T
- 1
1
A
= 125°C
75°C
25°C
25°C
- 1
V
V
R
DD
GS
G
1.2
= 10
= 10 V
= 4.0 V
PA1952
- 10
- 10
1.4
5