upa1952 Renesas Electronics Corporation., upa1952 Datasheet - Page 3

• Manufacturer Part Number: upa1952
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
- 0.01
- 100
- 0.1
- 10
120
100
80
60
40
20
- 1
0
- 0.1
FORWARD BIAS SAFE OPERATING AREA
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
R
(V
5 s (1 unit)
5 s (2 units)
M ounted on FR -4 board
of 5000 m m
Single pulse
DS(on)
GS
25
V
T
DS
= 4.5 V)
A
Lim ited
- Drain to Source Voltage - V
- Ambient Temperature - C
1000
50
100
10
- 1
2
1
x 1.1 m m
1 m
75
I
D(pulse)
100
I
D(DC)
- 10
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10 m
125
PW = 1 m s
A
= 25°C)
10 m s
100 m s
150
Data Sheet G15933EJ1V0DS
- 100
P
100 m
175
D
(FET1) : P
PW - Pulse Width - s
D
1
(FET2) = 1: 0
P
D
(FET1) : P
1.2
0.8
0.6
0.4
0.2
Single pulse
Mounted on FR-4 board of
5000 mm
1
0
10
0
D
25
(FET2) = 1: 1
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
2
A
x 1.1 mm
- Ambient Temperature - C
50
100
Mounted on FR-4 board of
5000 mm
75
2
x 1.1 mm, t
100
1000
2 units
1 unit
125
150
5 sec.
PA1952
175
3