upa1917 Renesas Electronics Corporation., upa1917 Datasheet - Page 5

• Manufacturer Part Number: upa1917
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

140
120
100
100
1000
80
60
40
20
80
60
40
20
100
10
-0.01
-50
1
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
-0.1
Pulsed
I
D
= 3.0 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
SWITCHING CHARACTERISTICS
T
ch
0
– Channel Temperrature - C
I
-0.1
I
T
D
D
A
- Drain Current - A
- Drain Current - A
= 125 C
25 C
75 C
25 C
50
-1
t
r
-1
V
V
R
Pulsed
V
V
(I
100
DD
GS
GS
G
D
GS
= 10
= 1.5 A)
t
= 15 V
= 4.0 V
= 1.8 V
f
= -1.8 V
t
d(on)
2.5 V
4.5 V
t
d(off)
150
Data Sheet G15925EJ1V0DS
-10
-10
100
10000
- 5
- 4
- 3
- 2
- 1
80
60
40
20
1000
0
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
0
10
0
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
-0.1
I
D
= 6.0 A
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
V
V
- 2
GS
DS
Q
2
V
G
– Gate to Source Voltage - V
- Drain to Source Voltage - V
DD
– Gate Charge - nC
= 4 V
10 V
16 V
-1
- 4
4
- 6
-10
6
I
D
- 8
Pulsed
= 3.0 A
f = 1MHz
V
GS
C
C
C
PA1917
oss
rss
iss
= 0 V
- 10
8
-100
5